We present measurement and analysis techniques that allow the complex magneto-conductivity tensor to be determined from measurements of the complex Faraday (θF) and Kerr (θK) angles. θF and θK are measured in a Ga1−xMnxAs and SrRuO3 films. Thick film transmission and reflection equations are used to convert the complex θF and θK into the complex longitudinal conductivity σxx and the complex tra...

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance ...

Single-electron transistor (SET) is a key element of current research area of nanotechnology which can offer low power consumption and high operating speed. Single electron transistor [SET] is a new nanoscaled switching device because single-electron transistor retains its scalability even on an atomic scale and besides this; it can control the motion of a single electron. The goal of this pape...

The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still...

Related Articles Modulating the secondary electron emission coefficient at the base-collector interface of the plasma bipolar junction transistor Appl. Phys. Lett. 102, 083502 (2013) Zero-field detection of spin dependent recombination with direct observation of electron nuclear hyperfine interactions in the absence of an oscillating electromagnetic field J. Appl. Phys. 112, 123714 (2012) Suppr...

We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional MOSFET structure having same channel length. The numericalresults are presented to show the self-heating effect on the I...

A method for collapsing the transistor chain of CMOS gates to a single equivalent transistor is introduced. The width of the equivalent transistor is calculated taking into account the operating conditions of each transistor in the structure, resulting in very good agreement with SPICE simulations. Second order effects such as carrier velocity saturation in submicron devices, body effect and co...

A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky Collector Bipolar Transistor (SCBT) in Silicon-On-Insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current...

In this research, a high performance silicon nanowire field-effect transistor (transconductance as high as 34 µS and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical characteristics are carefully characterized in a very well-controlled manner. We especially focused on ...