نتایج جستجو برای: electrochemical etching time
تعداد نتایج: 1946820 فیلتر نتایج به سال:
Figure 1 . Anisotropic etching of graphite by H 2 -plasma. a–c) AFM images of pristine, 50 W plasma-etched, and 100 W plasma-etched graphite. Plasma etching was performed at 500 ° C for 2 h. Magnifi ed images for the marked areas are shown. d) Measured maximum etching rate of graphite at various etching temperatures. The plasma power was 100 W. Solid lines represent Lorentzian line shape fi ts....
We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface conditioning for all Si layer transfer processes based on porous Si has been, up to now without exception, carried out by electrochemical etching. In contrast, our chemical stain etc...
In this research pitting Corrosion of a sensitized 316 stainless steel was investigated employing potentiodynamic, potentiostatic techniques. Sensitization process was carried out on as-received alloy by submitting the specimen in electric furnace set at 650°Cfor five hours and then the specimen was quenched 25°C water. Potentiodynamic polarization of as received and sensitized specimens in 1M ...
Relationship between the rate of electrochemical formation of mesoporous Si and the crystallographic directions has been studied by local anodization of wafers through a mask having the form of narrow long wedges radiating from the center in all directions ('wagon-wheel' mask). The etching rates were found from the side etching under the thin transparent n-Si mask. On p+-substrates of various o...
Note: advancement in tip etching for preparation of tunable size scanning tunneling microscopy tips.
The two aspects of a scanning tunneling microscopy tip, the macroscopic profile and the nanoscale apex, can be tailored by controlling the tension during electrochemical etching and the solution-electrode contact area via acetone vapor. The apex diameter is shown to be proportional to the square root of the tension, and is demonstrated over apex diameters of 150-500 nm. The apex was found to be...
We present a method to prepare tungsten tips for use in multi-tip scanning tunneling microscopes. The motivation behind the development comes from a requirement to make very long and conical-shape tips with controlling the cone angle. The method is based on a combination of a “drop-off” method and dynamic electrochemical etching, in which the tip is continuously and slowly drawn up from the ele...
Osseointegration has been defined as “a direct structural and functional connection between ordered, living bone and the surface of a load-carrying implant”. However, titanium and its alloys cannot directly bond to living bone after being implanted into the body. The osseointegration of titanium dental implants is critically dependent on the implant surface properties. Various surface modificat...
– We combine ab initio and Monte Carlo simulations in multiscale modelling of anisotropic wet chemical etching of silicon. The anisotropy of the macroscopic etching patterns observed in the experiments is explained by two mechanisms at an atomistic scale: the weakening of backbonds following OH termination of surface sites and the existence of significant interaction between the surface-termina...
Controllable etching and surface passivation of InP semiconductors are desirable for removing damaged surfaces and obtaining good electronic properties. We have observed that organic acids ~a-hydroxy acids: tartaric, lactic, citric, and malic!, when used in conjunction with HCl to etch the ~100! surface of InP results in smoother and defect-free surfaces, in comparison to etches based on inorga...
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