نتایج جستجو برای: electron transport property

تعداد نتایج: 703390  

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه اصفهان - دانشکده علوم 1387

چکیده ندارد.

Journal: :IEICE Transactions 2011
Jungwoo Oh Jeff Huang Injo Ok Se-Hoon Lee Paul D. Kirsch Raj Jammy Hi-Deok Lee

We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technolog...

Journal: :Nature communications 2012
Seung Sae Hong Judy J Cha Desheng Kong Yi Cui

A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here w...

2014
D. Bruce Buchholz Qing Ma Diego Alducin Arturo Ponce Miguel Jose-Yacaman Rabi Khanal Julia E. Medvedeva Robert P. H. Chang

A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-to-crystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmis...

Journal: :Nanoscale 2014
Yesle Park Jung Woo Lee Su-Jin Ha Jun Hyuk Moon

The effectiveness of the 1D nanorod (NR)-planted 3D inverse opal (IO) structure as an electrode for dye-sensitized solar cells (DSSCs) is demonstrated here. The NRs were grown on the surface of a macroporous IO structure and their longitudinal growth increased the surface area of the structure proportional to the growth duration. NR/IO electrodes with various NR growth times were compared. A re...

2012
M. Forster E. Fourmond F. E. Rougieux A. Cuevas R. Gotoh K. Fujiwara S. Uda

Related Articles Inelastic carrier lifetime in bilayer graphene Appl. Phys. Lett. 100, 032106 (2012) Carrier dynamics in bulk GaN J. Appl. Phys. 111, 023702 (2012) Photon recycling effect on electroluminescent refrigeration J. Appl. Phys. 111, 014511 (2012) Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy J. Appl....

Journal: :international journal of optics and photonics 0
zahra danesh kaftroudi department of engineering sciences, faculty of technology and engineering east of guilan, university of guilan, 44891-63157, rudsar-vajargah, iran esfandiar rajaei department of physics, university of guilan, 41335-1914, rasht, iran

in this study, we have theoretically investigated the effect of electron stopper layer on internal temperature distribution of high performance vertical cavity surface-emitting laser emitting at 1305 nm.  simulation software pics3d, which self-consistently combines the 3d simulation of carrier transport, self-heating, gain computation and wave-guiding, was used. simulation results show that cha...

2001
Mike Wrigley Peter Wyatt

New transport infrastructure may increase residential property values due to improved accessibility and increase commercial property values due to improved accessibility and possible agglomeration benefits. Classic urban location theory states that lower transport costs will result in higher land and property values. Theoretical parameters limit this relationship to an individual piece of trans...

2014
Shengwei Li Yaodong Hu Yangqing Wu Daming Huang Peide D. Ye Ming-Fu Li Peide D Ye

Based on the multiple subbands quasi-ballistic transport theory, we investigate the electronic transport of nano size In0.53Ga0.47As nFinFETs with Al2O3 gate dielectric, emphasizing the saturation current region. 1D mobile charge density and gate capacitance density are introduced for the first time to describe the nano-FinFET transport property under volume inversion. With the extracted effect...

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