نتایج جستجو برای: epitaxial

تعداد نتایج: 9450  

2015
Zhenchao Wen Takahide Kubota Tatsuya Yamamoto Koki Takanashi

Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler a...

2013
Brad Michael Boyerinas

Title of Document: FORMATION AND CHARACTERIZATION OF TRANSVERSELY MODULATED NANOSTRUCTURES IN METALLIC THIN FILMS USING EPITAXIAL CONTROL Brad Michael Boyerinas, Ph.D, 2013 Directed By: Hugh A. Bruck, Professor, Department of Mechanical Engineering This thesis describes a fundamental investigation into the formation, characterization, and modeling of epitaxially-controlled self-assembly at the ...

1997
Q. Z. Liu L. Shen K. V. Smith C. W. Tu E. T. Yu T. F. Kuech

Epitaxy of Al films deposited on GaN has been studied using reflection high-energy electron diffraction ~RHEED!, atomic force microscopy ~AFM!, x-ray diffraction, and ion channeling techniques. Al ~111! films have been found to grow epitaxially on GaN ~0001! surfaces with Al ^21̄ 1̄&iGaN^21̄ 1̄0&. For growth at 15 and 150 °C with a deposition rate of 0.26 Å/s, the epitaxial quality of the film was ...

2016
Junfeng Gao Gang Zhang Yong-Wei Zhang

Stanene, a two-dimensional topological insulator composed of Sn atoms in a hexagonal lattice, is a promising contender to Si in nanoelectronics. Currently it is still a significant challenge to achieve large-area, high-quality monolayer stanene. We explore the potential of Ag(111) surface as an ideal substrate for the epitaxial growth of monolayer stanene. Using first-principles calculations, w...

2016
Arni S. Ingason Andrejs Petruhins Johanna Rosen

Toward Structural Optimization of MAX Phases as Epitaxial Thin Films Arni S. Ingason, Andrejs Petruhins & Johanna Rosen To cite this article: Arni S. Ingason, Andrejs Petruhins & Johanna Rosen (2016) Toward Structural Optimization of MAX Phases as Epitaxial Thin Films, Materials Research Letters, 4:3, 152-160, DOI: 10.1080/21663831.2016.1157525 To link to this article: http://dx.doi.org/10.1080...

Journal: :Dalton transactions 2013
Kenji Hirai Kebi Chen Tomohiro Fukushima Satoshi Horike Mio Kondo Nicolas Louvain Chiwon Kim Yoko Sakata Mikhail Meilikhov Osami Sakata Susumu Kitagawa Shuhei Furukawa

Hybridized porous coordination polymers (PCPs) are synthesized through epitaxial growth or ligand replacement. Whereas epitaxial growth on the core crystal leads to a sandwich type PCP, ligand replacement near the surface of core crystal results in a core-shell type PCP.

2005
J. R. Frederick D. Gall

CrN layers, 57 and 230 nm thick, were grown on MgO 001 at Ts=600–800 °C by ultrahigh-vacuum magnetron sputter deposition in pure N2 discharges from an oblique deposition angle =80°. Layers grown at 600 °C nucleate as single crystals with a cube-on-cube epitaxial relationship with the substrate. However, rough surfaces with cauliflower-type morphologies cause the nucleation of misoriented CrN gr...

2008
O. E. Mougin R. Coxon P. A. Gowland

Introduction: Magnetization Transfer and technically related effects such as CEST are important sources of contrast in MRI. Studying MT in vivo at 7T is challenging due to the increase in longitudinal relaxation time and SAR limits. To overcome this, we use pulsed saturation with EPI readout (MT-EPI) to measure MT at a range of offset frequencies and on the approach to steady-state in a reasona...

2010
Cristian Cismaru Hal Banbrook Peter J. Zampardi

Developing rugged transistors requires careful consideration of the HBT’s collector design. In this work we present a test methodology for high-volume, in-line measurement of device ruggedness. This method is useful not only when developing new epitaxial structures for HBT devices, but also allows in-line monitoring of the device ruggedness for possible deviations due to epitaxial or manufactur...

Journal: :Nano letters 2010
Adam L Friedman Joseph L Tedesco Paul M Campbell James C Culbertson Edward Aifer F Keith Perkins Rachael L Myers-Ward Jennifer K Hite Charles R Eddy Glenn G Jernigan D Kurt Gaskill

We report the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SiC. We show that multilayer epitaxial graphene exhibits large LMR from 2.2 K up to room temperature and that it can be best explained by a purely quantum mechanical model. We attribute the observation of LMR to inhomogeneities in the epitaxially grown graphene film. The large magnitude o...

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