Molecular beam epitaxy is an important method for growing thinlms and nanostructures. One of the scienti c challenges is to understand the fundamental processes that control the evolution of thin lm structure and morphology. The results of kinetic Monte Carlo simulations carried out to study the dependence of the submonolayer scaled island-size distribution on the critical island-size are prese...

In this article I provide a brief theoretical perspective on our current understanding of the dynamic scaling phenomena in nonequilibrium epitaxial growth with the emphasis on the extensively studied ultrahigh vacuum thin film deposition growth, such as MBE growth, where the main growth front smoothening mechanism competing against the surface kinetic roughening induced by inherent shot noise f...

A detailed mechanism for heteroepitaxial diamond nucleation under ion bombardment in a microwave plasma enhanced chemical vapour deposition setup on the single crystal surface of iridium is presented. The novel mechanism of Ion Bombardment Induced Buried Lateral Growth (IBI-BLG) is based on the ion bombardment induced formation and lateral spread of epitaxial diamond within a ~1 nm thick carbon...

We report the observation of an unusual phase assembly behavior during the growth of hexagonal LuFeO(3) thin films which resulted in the formation of epitaxial Fe(3)O(4) nanolayers. The magnetite layers were up to 5 nm thick and grew under the conditions at which Fe(2)O(3) is thermodynamically stable. These Fe(3)O(4) nanolayers act as buffer layers promoting a highly epitaxial growth of the hex...

The kinetics of stressed solid-phase epitaxial growth (SPEG), also referred to as solid-phase epitaxy, solidphase epitaxial regrowth, solid-phase epitaxial recrystallization, and solid-phase epitaxial crystallization, of amorphous (a) silicon (Si) created via ion-implantation are reviewed. The effects of hydrostatic, in-plane uniaxial, and normal uniaxial compressive stress on SPEG kinetics are...

Li-ion battery systems, synthesized as epitaxial thin films, can provide powerful insights into their electrochemical processes. Crystallographic analysis shows that many important cathode oxides have an underlying similarity: their structures can be considered as different ordering schemes of Li and transition metal ions within a pseudo-cubic sublattice of oxygen anions arranged in a face-cent...

We review recent developments in the epitaxial integration of multifunctional oxide thin film heterostructures on silicon (Si). Perovskite oxides have been extensively studied for use in multifunctional devices due to a wide range of functional properties. To realize multifunctional oxide devices, these multifunctional films should be integrated directly on Si, maintaining high crystalline qual...

We report epitaxial growth of compressively strained silicon directly on (100) silicon substrates by plasma-enhanced chemical vapor deposition. The silicon epitaxy was performed in a silane and hydrogen gas mixture at temperatures as low as 150 C. We investigate the effect of hydrogen dilution during the silicon epitaxy on the strain level by high-resolution x-ray diffraction. Additionally, tri...

Epitaxial growth of vertical GaAs nanowires on Si(111) substrates is demonstrated by metal-organic chemical vapor deposition via a vapor-liquid-solid growth mechanism. Systematic experiments indicate that substrate pretreatment, pregrowth alloying temperature, and growth temperature are all crucial to vertical epitaxial growth. Nanowire growth rate and morphology can be well controlled by the g...