In this colloquia review we discuss methods for thermal transport calculations for nanojunctions connected to two semi-infinite leads served as heat-baths. Our emphases are on fundamental quantum theory and atomistic models. We begin with an introduction of the Landauer formula for ballistic thermal transport and give its derivation from scattering wave point of view. Several methods (scatterin...

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

The great potential of organic heterostructures for organic device applications is exemplified by the targeted engineering of the electronic properties of phthalocyanine-based systems. The transport properties of two different phthalocyanine systems, a pure copper phthalocyanine (CoPc) and a flourinated copper phthalocyanine-manganese phthalocyanine (F16CoPc/MnPc) heterostructure, are investiga...

The doping effect of graphene nanoplatelets (GNPs) on electrical insulation properties of polyethylene (PE) was studied by combining experimental and theoretical methods. The electric conduction properties and trap characteristics were tested for pure PE and PE/GNPs composites by using a direct measurement method and a thermal stimulated current (TSC) method. It was found that doping smaller GN...

The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5-8-5 sp(2)-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-bindin...

In this paper, electrical characteristics of the double gate metal oxide semiconductor field effect transistor (DG MOSFET) and that of gate all around silicon nanowire transistor (GAA SNWT) have been investigated. We have evaluated the variations of the threshold voltage, the subthreshold slope, draininduced barrier lowering, ON and OFF state currents when channel length decreases. Quantum mech...

The analytical modeling of nanoscale Double-Gate MOSFETs (DG) requires generally several necessary simplifying assumptions to lead to compact expressions of current-voltage characteristics for nanoscale CMOS circuits design. Further, progress in the development, design and optimization of nanoscale devices necessarily require new theory and modeling tools in order to improve the accuracy and th...

The fundamentally sound non-Equilibrium Green’s function (NEGF) approach provides the theoretical basis for NEMO 1-D as the first nanoelectronic TCAD tool. Effects of quantum charging, bandstructure and incoherent scattering from alloy disorder, interface roughness, acoustic phonons, and polar optical phonons are modeled. Engineers and experimentalists who desire a black-box design tool as well...

While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic ...