A comprehensive study of the scaling negative capacitance FinFET (NC-FinFET) is conducted with TCAD. We show that NC-FinFET can be scaled to "2.1nm node" and almost "1.5nm comes two nodes after industry "3nm node," which has 16nm Lg last node according International Roadmap for Devices Systems (IRDS). In addition, intervening nodes, meet IRDS Ion Ioff target at target-beating VDD. The benefits ...

The presentation of FinFET Technology has opened new sections in Nano-innovation. The arrangement of ultra-thin fin empowers stifled short channel effects. It is an alluring successor to the single gate MOSFET by the righteousness of its prevalent electrostatic properties and relative simplicity of manufacturability. Fin type field-impact transistors (FinFETs) are promising substitutes for mass...

A modeling study of dynamic threshold voltage in high K gate stack is reported in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this model is applied in FinFET reliability and circuit performances are simulated. The result shows that, the drain circuit (Id) degradation in FinFET is much more obvious than normal MOSFETs with...

Keywords: Soft error Bulk FinFET MUSCA SEP3 VLSI design Supply voltage Soft error sensitivity a b s t r a c t This work presents a comparative soft error evaluation of logic gates in bulk FinFET technology from 65-down to 32-nm technology generations. Single Event Transients induced by radiations are modeled with the MUSCA SEP3 tool, which explicitly accounts for the layout and the electrical p...

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET" (2008). Birck and NCN Publications. Paper 129.

When working for low power application the main estimation is to reduce leakage components and parameters. This stanza explores a vast link towards low leakage power SRAM cells using new technology and devices. The RAM contains bi-stable cross coupled latch which has V_th higher in write mode access MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and lower V_th in read access mode MO...

FinFET transistors have emerged as novel devices having superior controls over short channel effects (SCE) than the conventional MOS transistor devices. However, FinFET exhibit certain undesirable characteristics such as corner effects, quantum effects, tunneling etc. Usually, the corner effect deteriorates the performance by increasing the leakage current. In this work, the corner effect of Tr...

Finite Elements Method simulation of Total Ionizing Dose effects on 22 nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD are presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400 nm SiO2 capacitors irradiated under zero bias. The FinFET device characteristics are calibra...

For the prediction of the device performance of FinFET structures three-dimensional device simulation is inevitable. Due to the strong quantum mechanical confinement in the channel, quantum correction models need to be applied. Two of these models, where one is based on the correction of the densityof-states in a pre-processing step and the other calculates a correction for the band edge energy...