FinFET devices are comprehensively investigated owing to the projection for application in the CMOS integrated circuits fabrication. Deducing MOSFET size have great influence on electrostatic characteristic.The indiscriminate variations of the characteristics lead to a divergence effect which is imperative from the point of view of design and manufacture. In this paper different types of the po...

Fully-depleted transistor technologies, both planar and fin-type, are now in the mainstream for product designs. One of the many interesting topics in the new 3D FinFET technology is the approach to isolation. In this article, key elements that differentiate junction-isolated (bulk) and dielectric-isolated (SOI) FinFET transistors are discussed, encompassing aspects of process integration, devi...

High-performance PMOSFETs with sub-50–nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel effects. This vertical double-gate SOI MOSFET features: 1) a transistor channel which is formed on the vertical surfaces of an ultrathin Si fin and controlled by gate electrodes formed on both sides of the fin; 2) two gates which are self-...

In this paper, we analyze the variability of III-V homojunction tunnel FET (TFET) and FinFET devices and 32-bit carry-lookahead adder (CLA) circuit operating in near-threshold region. The impacts of the most severe intrinsic device variations including work function variation (WFV) and fin line-edge roughness (fin LER) on TFET and FinFET device Ion, Ioff, Cg, 32-bit CLA delay and power-delay pr...

سابقه و هدف: گیاه­ پالایی مقرون­ به­ صرفه سازگار با محیط زیست است که در آن گیاه از توانایی‌‌های طبیعی خود برای بازیابی استفاده ‌‌می‌‌‌کند. گیاهان مورد باید توانایی انباشت مقادیر زیادی آلاینده‌‌های فلزی را بدون ایجاد سمیت آنها داشته باشند. امروزه افزایش جمعیت جهان به دنبال توسعه صنایع کارخانه‌‌ها، بر میزان پساب‌‌های وارده غالبا حاوی فلزات سنگین مختلف ‌‌می‌‌‌باشند، افزوده ‌‌می‌‌‌شود. تاثیرات مخرب...

FinFET has appeared to be a good candidate for further extending the technology to the nanoscale regime due to its excellent electrostatic properties and comparative ease of fabrication. Due to little/no body effect in FinFET devices, there is a good chance of increasing the stack height to enable more complex gates and reduce logic depth, which could further improve metrics, like performance. ...

Considering the difficulties in planar CMOS transistor scaling to secure an acceptable gate to channel control FinFET based multi-gate (MuGFET) devices have been proposed as a technology option for replacing the existing technology. The desirability of FinFET that it’s operation principle is same as CMOS process. This permits to lengthening the gate scaling beyond the planar transistor limits, ...

هدف: کبد از حساس‌ترین بافت‌های هدف فشار اکسایشی ناشی تمرین می‌باشد و آمینوترانسفراز‌های کبدی، شاخص‌های حساسی برای تعیین آسیب دیدگی سلول‌های کبدی هستند. پژوهش حاضر با مقایسه تأثیر هشت هفته TRX مقاومتی سنتی بر برخی آنزیم‌های (آسپارتات آمینو ترانسفراز آلانین ترانسفراز) در زنان غیرفعال انجام گرفت.روش ­ها: این که به روش نیمه تجربی شد، 28 دختر میانگین سن41/1±07/21 سال شاخص توده بدن 25/4±52/22 کیلوگرم...

Conventional CMOS technology's performance deteriorates due to increased short channel effects. Double-gate (DG) FinFETs has better short channel effects performance compared to the conventional CMOS and stimulates technology scaling. The main drawback of using CMOS transistors are high power consumption and high leakage current. Fin-type field-effect transistors (FinFETs) are promising substit...