A comprehensive study of the intrinsic reliability of a 1.4-nm (equivalent oxide thickness) JVD Si3N4 gate dielectric subjected to constant-voltage stress has been conducted. The stress leads to the generation of defects in the dielectric. As the result, the degradation in the threshold voltage, subthreshold swing, gate leakage current, and channel mobility has been observed. The change in each...

We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also c...

This paper presents details on ultra thin (silicon dioxide and silicon nitride based composite structures) dielectrics that have the potential for meeting future device requirements. The increase in gate leakage current is a major problem for scaled conventional gate oxide in advanced device technology. Approaches to minimize this problems have been reviewed. Various Gate, Interlayer and DRAM d...

The performance of organic thin-film transistors (OTFT) for flexible, low cost and disposable “plastic” electronic products advances rapidly: various organic semiconductors display hole or electron carrier mobilities that compare favorably with those of hydrogenated amorphous silicon, the inorganic counterpart for such applications as flexible displays, smart cards and radio frequency identific...

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of oc...

Related Articles The influence of gate dielectrics on a high-mobility n-type conjugated polymer in organic thin-film transistors APL: Org. Electron. Photonics 5, 21 (2012) Graphene-protein bioelectronic devices with wavelength-dependent photoresponse Appl. Phys. Lett. 100, 033110 (2012) Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxidese...

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increase...

For the first time, we demonstrate experimentally that by using HfLaO high-κ gate dielectric, the flat-band voltage (Vfb) and the threshold voltage (Vth) of metal-electrode-gated MOS devices can be tuned effectively in a wide range (wider than that from the Si-conduction band edge to the Si-valence band edge) after a 1000-◦C annealing required by a conventional CMOS source/drain activation proc...

The study of scanning tunneling microscopy (STM) induced localized dielectric degradation and polarity dependent breakdown (BD) in HfO2/SiOx dielectric stacks is presented in this work, together with a correlated investigation of the BD locations by transmission electron microscopy (TEM). The localized dielectric BD events are also analysed using conductive-atomic force microscopy (C-AFM). The ...

Based on the energy-dispersion relation in each region of the gate-dielectric-silicon system, a tunneling model is developed to understand the gate current as a function of voltage and temperature. The gate capacitance is self-consistently calculated from Schrödinger and Poisson equations subject to the Fermi–Dirac statistics, using the same band structure in the silicon as used for tunneling i...