Multi-gate MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high K dielectric materials as oxide layer at different places in MOSFET structures. One of the most impor...

Recent rapid progress of information technology owes very much to that of semiconductor technologies, especially to that of CMOS. However, the downsizing of CMOS devices is now facing severe difficulties for sub-0.1 μm generations because of various expected limitations. For, example, SiO2 has been used almost exclusively as the material for the gate insulator since the first realization of the...

Transistor size is decreasing day by day, therefore it is difficult to overcome the problem of short channel effects. For preventing short channel effects, source/drain engineering, substrate engineering & gate engineering have been introduced. According to chronological growth of VLSI Design, there is need of non-conventional structure of MOSFET and researchers are getting shifted in search of...

High performance single-walled carbon nanotube field effect transistors SWCNT-FETs fabricated with thin atomic layer deposited ALD Al2O3 as gate dielectrics and passivation layer are demonstrated. A 1.5 m gate-length SWCNT-FETs with 15 nm thick Al2O3 insulator shows a gate leakage current below 10−11 A at −2.5 V Vg +7 V, a subthreshold swing of S 105 mV/decade, and a maximum on current of −12 A...

In electron beam devices, the voltage applied to the cathode (w.r.t. grid voltage) provides the initial energy for the electrons. Based on the type of electron emission, the electron sources are (mainly) classified into thermionic cathodes and cold cathodes. The power consumption of a cold cathode is smaller than that of a thermionic cathode. The delay time of the electron emission from a cold ...

Near-gate plasmons are a new type of plasma oscillations emerging in homogeneous two-dimensional electron systems where gate provides partial screening electron-electron interaction. Here we develop theory the near-gate van der Waals heterostructures comprising conducting layer separated by thin insulator from an uncharged disk-shaped gate. We show that these structures form gate-size-quantized...

We analyze the phase transitions of an interacting electronic system weakly coupled to free-electron leads by considering its zero-bias conductance. This is expressed in terms of two effective impurity models for the cases with and without spin degeneracy. Using the half-filled ionic Hubbard ring, we demonstrate that the weight of the first conductance peak as a function of external flux or of ...

The operation of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is based on the fact that the lateral conductivity of silicon at the silicon dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between metal gate and oxide, and applying a voltage across the insulator on top of the silicon, the lateral conducti...

We propose a spin-orbit qubit in a nanowire quantum dot on the surface of a multiferroic insulator with a cycloidal spiral magnetic order. The spiral exchange field from the multiferroic insulator causes an inhomogeneous Zeeman-like interaction on the electron spin in the quantum dot, producing a spin-orbit qubit. The absence of an external magnetic field benefits the integration of such a spin...