Liang Zhou, member IEEE and YiFeng Wu, member IEEE Transphorm, Inc. 75 Castilian Dr., Goleta, CA, 93117 USA [email protected] Abstract: This paper presents a true bridgeless totem-pole Power-Factor-Correction (PFC) circuit using GaN HEMT. Enabled by a diode-free GaN power HEMT bridge with low reverse-recovery charge, very-high-efficiency single-phase AC-DC conversion is realized using a t...

Pronounced resonant absorption and frequency dispersion associated with an excitation of collective 2D plasmons have been observed in terahertz (0.5-4THz) transmission spectra of grating-gate 2D electron gas AlGaN/GaN HEMT (high electron mobility transistor) structures at cryogenic temperatures. The resonance frequencies correspond to plasmons with wavevectors equal to the reciprocal-lattice ve...

Among the most important components in complex and high-power mechatronic systems is transistor. The High Electron Mobility Transistor (HEMT) a technology under development. This paper presents hybrid Reliability Based Design Optimization (RBDO) method applied to HEMT order improve its performance reliability. execution of RBDO processes requires development coupling two models: finite element ...

This work describes the improved uniformity of short gate length (sub100nm) T-gate lithography observed for InP HEMT devices through the development of a nonannealed ohmic contact process. The incorporation of such a process allows the reversal of ohmic and gate levels as part of a standard device process flow. This eliminates fluctuations in the gate geometry that result from the spinning of g...

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1-xN}/AlN, (b) Thin-GaN/3 × {AlxGa1-xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross...

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN s...

Gallium–nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and elded in applications ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations. GaN HEMT devices, exhibiting high power densities coupl...