نتایج جستجو برای: heterojunction bipolar transistor lasers hbtls

تعداد نتایج: 84759  

2013
V. Vassilev H. Zirath V. Furtula Y. Karandikar K. Eriksson

This paper presents a pre-amplified detector receiver based on a 250 nm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) process available from the Teledyne scientific. The front end consists of a double slot antenna followed by a five stage low noise amplifier and a detector, all integrated onto the same circuit. Results of measured responsivity and noise are presented. The recei...

2017
G. Giroult-Matlakowski H. Bousseta B. Le Tron D. Dutartre P. Warren M. Bouzid A. Nouailhat P. Ashburn A. Chantre

In this paper we present an investigation of the static performance over the 300K-80K temperature range of pseudo-heterojunction bipolar transistors using an advanced single-polysilicon CMOS compatible self-aligned structure and epitaxial growth for the base and the low doped emitter spacer. These devices exhibit ideal collector currents and non-ideal base currents. By analysing the base leakag...

2001
S.-W. Chen K. Wakino T. Nishikawa H. Matsumoto Y. Ishikawa C. L. Ren V. Madrangeas M. Aubourg P. Guillon S. Vigneron K. Tsunoda J.-F. Liang K. A. Zaki C. Wang H.-W. Yao H. Y. Hwang N. S. Park H. Y. Cho S. W. Yun A. Abdelmonem

Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Microstrip transmission lines with characteristic impedances from 44 to 73 , ’s from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 GHz are presented. Convent...

2000
A. G. Baca P. C. Chang N. Y. Li H. Q. Hou

We have demonstrated a P-n-P Ga&JInGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (Vo~) that is 0.27 V lower than in a comparable P-n-p AIGaAs/GaAs HBT. The device shows nearide.al DC characteristics with a curfent gain (~) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AIGaAs/GaAs HBT, with ~~ and ~M...

1995
T. P. Chin J. C. P. Chang J. M. Woodall W. L. Chen G. I. Haddad A. K. Ramdas

Solid phosphorus is successfully incorporated into a molecular-beam epitaxy system by a valved-cracker for the growth of phosphorus-based materials. The operating parameters are established through beam flux and reflection high-energy electron diffraction measurements. InP and InGaP lattice matched to GaAs were grown and characterized by Hall measurements, photoluminescence, electroreflectance,...

2004
Cheh-Ming Liu Emilio A. Sovero David B. Rutledge

A 16-element heterojunction-bipolar-transistor (HBT) grid amplifier has been fabricated with a peak gain of 11 dB at 9.9 GHz with a 3-dB bandwidth of 350 MHz. Here we report a model of gain analysis for the grid and give a comparison of the measurement and theory. Measured patterns gives evidence of a common-mode oscillation. A stability model for the common-mode oscillation is developed. Based...

2008
Haiying He Ravindra Pandey Shashi P. Karna

The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a conjugated wire. The calculated results show the enhancement or depletion mode of a transistor by applying a gate field a...

2001
Guofu Niu Qingqing Liang John D. Cressler David L. Harame

Two-tone intermodulation in ultrahigh vacuum/chemical vapor deposition SiGe heterojunction bipolar transistors (HBTs) were analyzed using a Volterra-series-based approach that completely distinguishes individual nonlinearities. Avalanche multiplication and collector–base (CB) capacitance were shown to be the dominant nonlinearities in a single-stage common-emitter amplifier. At a given , an opt...

Journal: :Nanotechnology 2008
Haiying He Ravindra Pandey Shashi P Karna

The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor, is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a pi-conjugated wire. The calculated results show the enhancement or depletion mode of a transistor on applying a gate fiel...

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