نتایج جستجو برای: heterojunction bipolar transistor lasers hbtls
تعداد نتایج: 84759 فیلتر نتایج به سال:
This paper presents a pre-amplified detector receiver based on a 250 nm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) process available from the Teledyne scientific. The front end consists of a double slot antenna followed by a five stage low noise amplifier and a detector, all integrated onto the same circuit. Results of measured responsivity and noise are presented. The recei...
In this paper we present an investigation of the static performance over the 300K-80K temperature range of pseudo-heterojunction bipolar transistors using an advanced single-polysilicon CMOS compatible self-aligned structure and epitaxial growth for the base and the low doped emitter spacer. These devices exhibit ideal collector currents and non-ideal base currents. By analysing the base leakag...
Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Microstrip transmission lines with characteristic impedances from 44 to 73 , ’s from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 GHz are presented. Convent...
We have demonstrated a P-n-P Ga&JInGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (Vo~) that is 0.27 V lower than in a comparable P-n-p AIGaAs/GaAs HBT. The device shows nearide.al DC characteristics with a curfent gain (~) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AIGaAs/GaAs HBT, with ~~ and ~M...
Solid phosphorus is successfully incorporated into a molecular-beam epitaxy system by a valved-cracker for the growth of phosphorus-based materials. The operating parameters are established through beam flux and reflection high-energy electron diffraction measurements. InP and InGaP lattice matched to GaAs were grown and characterized by Hall measurements, photoluminescence, electroreflectance,...
A 16-element heterojunction-bipolar-transistor (HBT) grid amplifier has been fabricated with a peak gain of 11 dB at 9.9 GHz with a 3-dB bandwidth of 350 MHz. Here we report a model of gain analysis for the grid and give a comparison of the measurement and theory. Measured patterns gives evidence of a common-mode oscillation. A stability model for the common-mode oscillation is developed. Based...
The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a conjugated wire. The calculated results show the enhancement or depletion mode of a transistor by applying a gate field a...
Two-tone intermodulation in ultrahigh vacuum/chemical vapor deposition SiGe heterojunction bipolar transistors (HBTs) were analyzed using a Volterra-series-based approach that completely distinguishes individual nonlinearities. Avalanche multiplication and collector–base (CB) capacitance were shown to be the dominant nonlinearities in a single-stage common-emitter amplifier. At a given , an opt...
The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor, is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a pi-conjugated wire. The calculated results show the enhancement or depletion mode of a transistor on applying a gate fiel...
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