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1. Introduction The invention of the High-Electron Mobility Transistor (HEMT) revolutionized the world of high-frequency electronics [1]. First on GaAs, then on InP and more recently on GaN, HEMTs have steadily achieved higher levels of performance in terms of high frequency gain, noise and power. Today, InAs HEMTs on InP exhibit the best balanced high-frequency response (high f T and high f ma...

Unintentionally doped (UID) AlGaN/GaN-based multichannel high electron mobility transistor (MC-HEMT) heterostructures have been demonstrated on the SiC substrate using plasma-assisted molecular beam epitaxy. The MC-HEMT heterostructure with a GaN channel thickness of 100 nm resulted in cumulative two-dimensional gas (2DEG) concentration 4.3 × 1013 cm−2 across six channels. sample showed sheet r...

The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all necessary equations are detailed and coupled. This proposed by finite element method using Comsol multiphysics software, allowed to behaviour transistor observe different degradations in structure component. Then, an optimization is avoid failures transistor. In this work, we have...

We present transport measurements of surface-state electrons on liquid helium films in confined geometry. The measurements are taken using split-gate devices similar to a field effect transistor. The number of electrons passing between the source and drain areas of the device can be precisely controlled by changing the length of the voltage pulse applied to the gate electrode. We find evidence ...