High-resolution X-ray diffractometry, absolute integrated intensity ( ) measurements, diffuse X-ray scattering (DXS) and infrared (IR) absorption techniques were used to investigate the in ̄uence of oxygen on the structural perfection of high purity (resistivity of the order of 4 k cm) ̄oat zone (FZ) grown (111) silicon single crystals. A multicrystal diffractometer set in
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