نتایج جستجو برای: impurities transport

تعداد نتایج: 284201  

2008
William L. Rowan Igor O. Bespamyatnov

Density profiles for a light impurity, boron, are reported for internal transport barrier (ITB) discharges in Alcator C-Mod. During the ITB, the light impurity gradient steepens because the impurity pinch increases relative to diffusion. The ITB-induced impurity profile steepening is at approximately the same major radius as that for the main-ion profile. Neoclassical transport does not describ...

2014
Michael Mendoza Gang Chen Carl Richard Soderberg

Understanding how thermal transport is affected by disorder is crucial to the prediction and engineering of novel materials suitable for thermoelectric and device applications. Ab initio methods have demonstrated accurate calculations of the lattice contribution to thermal conductivity in semiconductors and dielectrics. Effective field theories and scattering theory have been combined to model ...

2014
Tatiana G. Rappoport Aires Ferreira Miguel A. Cazalilla Antonio H. Castro Neto

The spin Hall effect is the appearance of a transverse spin current in a non-magnetic conductor by pure electrical control. The extrinsic spin Hall effect originates from the spin-dependent skew scattering of electrons by impurities in the presence of SOI and can be used for an efficient conversion of charge current into spin-polarized currents. Recently, it has been explored for replacing ferr...

Journal: :Physical review 2021

Dynamical magnetic impurities (MI) are considered as a possible origin for suppression of the ballistic helical transport on edges two-dimensional (2D) topological insulators. The MIs provide spin-flip backscattering itinerant electrons. Such reduces conductance if exchange interaction between MI and electrons is anisotropic Kondo screening unimportant. It well known that isotropic do not suppr...

Journal: :Advanced materials 2016
Zhihao Yu Zhun-Yong Ong Yiming Pan Yang Cui Run Xin Yi Shi Baigeng Wang Yun Wu Tangsheng Chen Yong-Wei Zhang Gang Zhang Xinran Wang

By combining a high-κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room-temperature mobility of ≈150 cm(2) V(-1) s(-1) and room-temperature phonon-limited transport in a monolayer MoS2 transistor for the first time.

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