نتایج جستجو برای: impurity ion concentration

تعداد نتایج: 574199  

2008
Varun Tangri Gennady Fiksel

Anomalous ion and impurity heating in reversed field pinch plasmas is addressed. Previous work #N. Mattor et al., Comments Plasma Phys. Controlled Fusion 15, 65 !1992"$, which calculated the heating of bulk ions by gyro and Landau resonances with turbulent fluctuations cascading from unstable tearing modes, is extended to impurity species measured in Madison symmetric torus !MST". The heavier m...

Journal: :Japanese Journal of Applied Physics 2023

To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, have been introduced into wafers. Group II Zn and group VI impurities S Se, known to form levels, were the substrates by ion implantation. These samples analyzed for concentration-depth profiles, energy level depths, absence defects. introduce thin channels...

1993
A. Crisanti G. Paladin M. Serva A. Vulpiani

We introduce a one dimensional disordered Ising model which at zero temperature is characterized by a non-trivial, non-self-averaging, overlap probability distribution when the impurity concentration vanishes in the thermodynamic limit. The form of the distribution can be calculated analytically for any realization of disorder. For non-zero impurity concentration the distribution becomes a self...

2002
G. Bilalbegović

Structural optimization for heteronuclear clusters consisting of one alkali-metal ion and of up to 79 neutral rare gas atoms has been carried out. The basin-hopping Monte Carlo minimization method of Wales and Doye is used. Rare gas atoms interact with the Lennard–Jones potential, whereas the interaction between a neutral atom and an ion impurity is given by the Mason–Schamp potential. Starting...

2009
K. Ishimura N. Sadachika S. Kusu

Poisson equation explicitly. Good agreements have been proven for wide ranges of operation in condition. ABSTRACT We have developed the DG-MOSFET model HiSIM-DG based on the complete surface-potential-based description valid both for the symmetrical and the asymmetrical structures. HiSIM-DG including the short-channel effect model is verified to reproduce 2D-device simulation results for any ap...

2000
O. Újsághy J. Kroha

The conduction electron density of states nearby a single magnetic impurity, as measured recently by scanning tunneling microscopy (STM), is calculated. It is shown that the Kondo effect induces a narrow Fano resonance as an intrinsic feature in the conduction electron density of states. The line shape varies with the distance between STM tip and impurity, in qualitative agreement with experime...

Journal: :Batteries 2021

This paper is a product purity study of recycled Li-ion batteries with focus on hydrometallurgical recycling processes. Firstly, brief description the current status was presented based research data. Moreover, this work influence impurities such as Cu, Fe and Mg recovered cathode materials performance. The impact described depending their form (metallic or ionic) concentration. also reviewed p...

2002
V. Ramgopal Rao J. Vasi

In this paper for the first time we report a study on the small signal characterization and simulation of Single Halo (SH) thin film SOI nMOSFETs. The single halo structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration on the drain side. Besides having excellent dc output characteristics, better Vth – L roll-off control, low DIBL, hig...

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