in present work, we have calculated the electronic properties including density of states and electron density for gan, inn and inxga1-xn  in wurtzite phase for x=0.5. the study is based on density functional theory with full potential linearized augmented plane wave method by generalized gradient approximation for calculating electronic properties. in this report we concluded that inxga1-xn ba...

NAKAMURA. s.: ‘InGaN/AlGaN blue light emitting diodes’, J. Vac. Sci. Teclznol. A , 1995, 13, (3 ) , pt. I , pp. 705-710 NAKAMURA, S , SENOH, M , NAGAHAMA. S. , IWASA, N., YAMADA, T., MATSUSHITA. I., KIYOKU. H., and SUGIMOTO, Y : ‘InGaN-based multi-quantum-well-structure laser diodes’, Jpn. J. Appl. Pliys., 1996, 35, (le). pp. L74-L76 DMITRIbV, V.A.: ‘GaN based pn structures grown on Sic substra...

We report the distance-dependent energy transfer from an InGaN quantum well to graphene oxide (GO) by time-resolved photoluminescence (PL). A pronounced shortening of the PL decay time in the InGaN quantum well was observed when interacting with GO. The nature of the energy-transfer process has been analyzed, and we find the energy-transfer efficiency depends on the 1/d² separation distance, wh...

Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H2) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H2 increases from 0 to 6.25%, Ga surface-diffusion rate...

We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In conte...

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The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slop...

We have studied the temperature-dependent carrier transfer processes in InGaN/GaN multi-quantum-well light-emitting devices using various optical techniques such as photoluminescence, electroluminescence, and photoluminescence excitation spectra. The role of the defects in the GaN barrier neighboring to the InGaN region was demonstrated clearly in capturing carriers only at low temperatures. Th...

Synchrotron-based x-ray radiation has been utilized to measure time-resolved x-ray excited optical luminescence (TR-XEOL) from InGaN/GaN multiple quantum well (MQW) structures. Excess carrier recombination lifetimes were determined for MQWs grown on conventional c-plane as well as on non-polar m-plane substrates. In addition, the simultaneous measurement of XEOL and x-ray fluorescence reveals a...

2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. ...