We report on high-electrical-stress testing of Nichia GaN/InGaN/AlGaN single-quantum-well (SQW) light-emitting diodes. In contrast to our earlier experiments with double-heterostructure LEDs, the present SQW devices have been improved to the point that the encapsulating plastic fails under high electrical stress earlier than the diode itself. ( 1998 Published by Elsevier Science B.V. All rights...

the standards of endodontics have constantly been raised in the last 25 years by practitioners’ researches and their interest. most of the scientists believe the recent developments and the use of lasers as the most exciting achievement in endodontic treatment. nowadays, lasers are being used in endodontics to improve the prognosis of the root-filled teeth. the implement of suitable wavelengths...

background and aims. considering the importance of disinfecting dentin after cavity preparation and the possible effect of disinfection methods on induction of various reactions between the tooth structure and the adhesive restorative material, the aim of the present study was to evaluate microleakage of composite resin restorations after disinfecting the prepared dentin surface with nd:yag and...

The performance of devices fabricated from GaN and related compounds is strongly affected by the resistances caused by electrical contacts. To avoid excessive heating resulting in a failure of the device, speciŽc contact resistances less than ,10 Wcm for light-emitting diodes (LEDs) and less than ,10 Wcm for laser diodes are required. This applies in particular to ohmic contacts on p-doped GaN ...

abstract background: in recent years, the endovenous laser therapy (evlt) has been proposed to treat the incompetent greater saphenous veins (gsv) to increase patient comfort,and to reduce cost as well as risk. evlt causes vein wall thickening, luminal contraction and vein fibrosis. the purpose of this article, as the first report from iran, is to review our experience and outline the early res...

It is crucial to fabricate nano photonic devices such as nanolasers in order to meet the requirements for the integration of photonic and electronic circuits on the nanometre scale. The great difficulty is to break down a bottleneck as a result of the diffraction limit of light. Nanolasers on a subwavelength scale could potentially be fabricated based on the principle of surface plasmon amplifi...

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