نتایج جستجو برای: insulated gate bipolar transistor
تعداد نتایج: 95915 فیلتر نتایج به سال:
Easy inter-connection is a crucial advantage of the single-chip power ICs, which makes devices with multiple ports easy to improve carrier controllability without increasing process difficulty. Electrical characteristics get further improved thanks advanced controllability. In this paper, silicon-on-isolator lateral IGBT (SOI-LIGBT) featured four hybrid gates proposed obtain outstanding in turn...
In this paper, an offline evaluation method for the cooling capability of three-phase insulated-gate bipolar transistor (IGBT) inverters is presented, which can better emulate real working conditions. With a properly designed sudden-stop control sequence, conventional junction temperature monitoring at low current used to calculate before sudden stop inverter. This solve challenging switching l...
This paper presents a complete behavioral PSpice model for IGBT transistor. A voltage dependent capacitance is modeled using a second order polynomial and “arctan” function. The simulation results for I-V static and transfer characteristics and their comparisons with datasheets are shown. The dynamic model verification is carried out using PSpice simulations and experimental measurements of the...
This paper presents a model reduction approach for constructing lumped RC thermal networks of IGBTmodules of inverters for which heat and subsequent temperature increases vary with time on different scales ranging from nanosecond to second. It was observed that the time-dependent heat and temperature profiles of transistors and diodes of IGBT-modules of inverters oscillate at two frequencies, o...
A novel insulated gate bipolar transistor (IGBT) entitled NPN aided fast switching IGBT (NFS-IGBT) with a P-buffer layer is presented, which enhances the switching speed greatly. Compared with the conventional IGBT, double sided NPN structure is incorporated into the anode to facilitate the turn-off process. The proposed structure is verified by two-dimensional mixed device-circuit simulation, ...
This paper presents an extensive review of the analysis, modeling, design, testing and other aspects of an electronic load controller (ELC) found in the literature .The assumptions made and a brief description of the solution methods is presented. This paper describes step by step development in the area of ELC which provides helpful information and resources for the future studies for those in...
This paper deals with the control of voltage and frequency of a wind turbine driven isolated asynchronous generator. The controller consists of an IGBT (Insulated Gate Bipolar Junction Transistor) based 3-leg voltage source converter and a battery at its DC link. The controller is having bidirectional flow capability of active and reactive powers by which it controls the system voltage and freq...
-This paper analyzes a high-power (50 kW) high frequency (150 kHz) voltage-fed inverter with a seriesresonant load circuit for industrial induction heating applications, which is characterized by a full bridge inverter made of insulated-gate bipolar transistor and a power control based on pulse density modulation (PDM). This power control strategy allows the inverter to work close to the resona...
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