Previously, the general practice is to provide Insulated Gate Bipolar Transistors (IGBTs) with a gate characteristic that requires a negative gate drive bias to assure adequate turn-off when a high dv/dt is applied to the IGBT in a half bridge topology. However, providing the negative bias adds gate drive complexity. It also makes it difficult to use high voltage IC drivers because the ICs are ...

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

abstract: this paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (gnrfet). the results illustrate that the gnrfet under high temperature (ht-gnrfet) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay ...

The gate dependence of a Coulomb attractive random telegraph signal is observed in a single-walled carbon nanotube field effect transistor for temperatures varying from 0.32 to 24 K. The mechanism of the Coulomb attractive random telegraph signal is attributed to the carrier tunneling between the carbon nanotube and the Coulomb attractive defect. The random telegraph signal is also studied unde...

This study investigates geometrical variability on the sensitivity of the junctionless tunneling field effect transistor (JLTFET) and Heterostructure JLTFET (HJLTFET) performance. We consider the transistor gate dielectric thickness as one of the main variation sources. The impacts of variations on the analog and digital performance of the devices are calculated by using computer aided design (...

Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of the bond graph techniques to model modular power semiconductor devices. Furthermore, the IGBT is a ...

A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing density and thus reduce its on-resistance per...