نتایج جستجو برای: ir detectors
تعداد نتایج: 101662 فیلتر نتایج به سال:
A test socket chip for measuring dark currents of infrared (IR) detectors in a focal plane array (FPA) is presented in this paper. A calibration scheme adopted in this chip to cancel the leakage current due to OFF-state MOS switches tied to the measuring path is also demonstrated.
We report on the performance of a recently developed algorithm for which a limited form of black-body-based calibration is integrated into a special algebraic scenebased algorithm for nonuniformity correction (NUC) in infrared focal-plane arrays. The result of this integration is a scene-based NUC algorithm that is radiometrically accurate. By calibrating only those detectors that are on the ar...
We report on the first astronomical observations with a photon counting pixel detector that provides arrival time-(δt = 100ns) and energy-(δE γ ≤ 0.15 eV) resolved measurements from the near IR through the near UV. Our test observations were performed by coupling this Transition Edge Sensor (TES) device to a 0.6m telescope; we have obtained the first simultaneous optical near-IR phase-resolved ...
The most significant process for optical coating is variant of vacuum deposition. Zinc sulphide having direct and large band gap which is use in opto electronics. By using ZnS material in thermal evaporation technique and characterizing the minimum reflectance and maximum transmittance in visible wavelength and energy gap increases with increasing thickness having direct and large band gap. Whe...
We present an overview of the recent progress made in the development of a far-IR array of ultrasensitive hot-electron nanobolometers (nano-HEB) made from thin titanium (Ti) films. We studied electrical noise, signal and noise bandwidth, single-photon detection, optical noise equivalent power (NEP), and a microwave SQUID (MSQUID) based frequency domain multiplexing (FDM) scheme. The obtained re...
Thin films of hexagonal boron nitride carbon, h-(BN)1 x(C2)x, alloys in the C-rich side have been synthesized by metal-organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. X-ray diffraction measurements confirmed single hexagonal phase of h-(BN)1 x(C2)x epilayers. Electrical transport and Raman spectroscopy measurements results revealed evidences that homogenous h-(BN)1 x(C...
Recent tests indicate that the flight detectors selected for WFC3-IR may be subject to higher than expected background due to radiation effects. In this document I compare the performance of the FWC IR channel assuming FPA#64 with higher background versus the new substrate removed detectors currently under development at Rockwell Science Center. I also use as current benchmark the performance o...
In the paper, fundamental and technological issues associated with the development and exploitation of the most advanced infrared detector technologies are discussed. In this class of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys on silicon, type-II superlattices, uncooled thermal bolometers, and novel uncooled micromechanical...
We analyze the modulation characteristics of uncooled terahertz (THz) and infrared (IR) detectors using variation density effective temperature two-dimensional electron-hole plasma in uniform graphene layers (GLs) perforated (PGLs) due to absorption THz IR radiation. The performance photodetectors (both GL-photoresistor PGL-based barrier photodiodes) are compared. Their also compared with GL re...
Fourier transform infrared (FT-IR) imaging spectrometers are almost universally used to record microspectroscopic imaging data in the mid-infrared (mid-IR) spectral region. While the commercial standard, interferometry necessitates collection of large spectral regions, requires a large data handling overhead for microscopic imaging and is slow. Here we demonstrate an approach for mid-IR spectro...
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