Articles you may be interested in Graphene nanopore field effect transistors Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions Appl.

This brief proposes an analytical approach to model the DC electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistors (JL-NW-FETs). The includes explicit expressions, taking into account first-order perturbation theory for calculating eigenstates and corresponding wave-functions obtained by Schrödinger equation in cylindrical-coordinate. Assessment propos...

This paper presents a new ?-Ga2O3 Junctionless double gate Metal-Oxide-Field-Semiconductor-Effect-Transistor (?DG-JL-FET) with an embedded P+ packet at the oxide layer (PO-?DG-JL-FET) for high-frequency applications. Our goal is to achieve efficient volume depletion region by placing of silicon. We show that proposed structure has subthreshold swing ? 64 mV/decade. It suppressed band-to-band tu...