نتایج جستجو برای: lateral resistance
تعداد نتایج: 497635 فیلتر نتایج به سال:
Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and detection in germanium nanowires, by using ferromagnetic metal contacts and tunnel barriers for contact resistance engineering. Using data measured from over 80 sa...
We have observed commensurability oscillations (CO) in the Hall resistance $R_{yx}$ of a unidirectional lateral superlattice (ULSL). The CO, having small amplitudes ($\sim$ 1 $\Omega$) and being superposed on roughly three-orders magnitude larger background, are obtained by directly detecting difference between ULSL area adjacent unmodulated two-dimensional electron gas area, then extracting od...
The novel characteristics of a new lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) are explored using two-dimensional (2-D) simulation. The collector-base junction of the proposed lateral PNM transistor consists of a Schottky junction between n-base (N) and metal (M). The characteristics of this structure are compared with that of lateral PNP transistors o...
BACKGROUND Post-spinal hypotension is a common maternal complication during cesarean delivery. Aortocaval compression by the gravid uterus has been assumed as a precipitating factor for post-spinal hypotension. The role of left lateral tilting position in improving maternal cardiac output after subarachnoid block (SAB) is unclear. The aim of this work is to investigate the effect of left latera...
We present a lateral trench gate SOI-LDMOSFET that uses narrow trenches as channels. The lateral trench gate, which allows the channel current to flow laterally on the trench side walls, decreases its on-resistance because it increases the current spreading area of the device. The specific on-resistance ðRspÞ strongly depends on the trench depth, which affects the channel area on the side wall ...
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