We present a three-dimensional optical analysis of fringing effect in small color pixels. In addition to the simulation of optical reflectance in visible spectrum, we further expressed the reflectance in spatial color. Color leakage was easily located and it agreed well with the experiments.

There is a demand for portable devices like mobiles and laptops etc. and their long battery life. For high integrity CMOS VLSI circuit design in deep submicron regime, feature size is reduced according to the improved technology. Reduced feature size devices need low power for their operation. Reduced power supply, reduces the threshold voltage of the device. Low threshold devices have improved...

Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different properties of the electron blocker layer (EBL). The simulations show a strong influence of the EBL acceptor density on the droop. We also find...

We study fluid flow at the interfaces between elastic solids with randomly rough, self-affine surfaces. We show by numerical simulation that elastic deformation lowers the relative contact area at which contact patches percolate in comparison to traditional approaches to seals. Elastic deformation also suppresses leakage through contacts even far away from the percolation threshold. Reliable es...

We describe a theoretical approach to transport and a potentially valuable scheme for screening gate dielectric materials. Realistic structural models of the Si-dielectric interface are employed for Si-SiO2-Si model metal-oxide–semiconductor ~MOS! structures. The leakage current for a 1.02-nm MOS structure is calculated from first principles using Landauer’s ballistic transport approach and ab ...

This paper reviews the modeling of subthreshold leakage current and proposes an estimation method for passtransistor logic circuit. The estimation method takes into account the subthreshold current at the output buffer as well as in the logic network, where only single offtransistors are responsible for the standby current during the steady state analysis. The proposed leakage model has been va...