A compact wideband 2 -6GHz highly linear low noise amplifier is designed for Digital RF application. This design is implemented using MMIC using GaAs pseudomorphic high electron mobility transistors (pHEMTs). The proposed design is fundamentally designed for SDR and cognitive radio application. This LNA is implemented in 0.5um GaAs process and has a gain of 30dB at 2.45GHz and 23dB at 5GHz,Nois...

This paper shows the design of a broadband low noise amplifier (LNA) for ultra-wideband (UWB) system on 0.18um CMOS process. The proposed LNA uses resistive shunt feedback technique and an inter-stage inductor as an inductive peaking to realize the flat gain throughout the UWB band. The designed UWB LNA has a noise figure lower than 3.5dB, gain above 20dB in the frequency range 3. 1-10.2GHz. It...

The design and development of a cryogenic Ultra-Low-Noise Signal Amplification (ULNA) and detection system for spectroscopy of ultra-cold systems are reported here for the operation in the 0.5 4 GHz spectrum of frequencies (the “L” and “S” microwave bands). The design is suitable for weak RF signal detection and spectroscopy from ultra-cold systems confined in cryogenic RF cavities, as entailed...

This paper presents a 23–32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is imple...

This paper presents the design, fabrication and performance of a three-stage 155GHz monolithic low noise amplifier (LNA) using 0.1 -pm pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology. This amplifier exhibits a measured small signal gain of 12 dB at 155 GHz, and more than 10 dB gain from 151 to 156 GHz. When this amplifier is biased for low noise figure, a noise figure of 5.1 dB with associ...

Low Noise Amplifier (LNA) is the most critical part of a receiver front end, in term of the receiver performance. Many circuits with different configurations have been proposed for LNA, in different applications. After choosing proper circuit for LNA, this circuit must be designed and optimized. Various techniques have been proposed for LNA design and optimizations. In this section an overview ...

Received Sep 19, 2017 Revised Dec 30, 2017 Accepted Jan 17, 2018 This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being ...

For realizing a single chip microwave front-end, we studied the new design theory of impedance matching circuits for a Si-CMOS low noise amplifier (LNA) or power amplifier (PA), which are composed of coplanar waveguide (CPW) meanderline resonators and impedance inverters. We also present the simulated performances of CMOS-LNA or PA connected with input and output matching circuits. Finally, we ...

A 0.1–12GHz Low Noise Amplifier (LNA) with an active balun is proposed for multi-standard applications. In order to realize wideband matching and single-to-differential (S2D) conversion simultaneously, a single-end resistive negative feedback amplifier is adopted as the first stage for input impedance matching, and a novel active balun consisting of common source amplifier and source follower i...

Paper presents a Neural Network Modelling approach to microwave LNA design. To acknowledge the specifications of the amplifier, Mobile Satellite Systems are analyzed. Scattering parameters of the LNA in the frequency range 0.5 to 18 GHz are calculated using a Multilayer Perceptron Artificial Neural Network model and corresponding smith charts and polar charts are plotted as output to the model....