Using chromium (Cr), which was deposited by radio frequency magnetron sputtering, as a buffer layer for synthesizing high-quality hexagonal boron nitride (hBN) films low-pressure chemical vapor deposition (LPCVD) demonstrated. The effect of growth temperature and annealing process on the quality Cr investigated. characterization dependence hBN film temperature, substrate, discussed. All evidenc...

In this work, the effect of compressive surface stress on thin film membrane fracture was studied by bulge test. order to create membranes with residual at surface, low-pressure chemical vapor deposition (LPCVD) Si3N4 were coated a 1−8 nm SiNx adlayer or subjected Ar-ion bombardment. Fracture strength analysis, done using finite element method and Weibull distribution, microscope inspection fai...

We demonstrate, for the first time to our knowledge, a fully etched TM grating coupler for low-loss 12 Low-Pressure-Chemical-Vapor-Deposition (LPCVD) based silicon nitride platform with a coupling 13 loss of 6.5 dB at 1541 nm and a 1 dB bandwidth of 55 nm, addressing applications where TM 14 polarization is a pre-requisite. The proposed GC and the 360 nm × 800 nm strip based Si3N4 15 waveguides...

The Si-rich silicon oxide (SiOx) thin films are prepared on silicon crystalline substrates by low pressure chemical vapor deposition (LPCVD) method. The oxygen concentration x are controlled by the ratio of the partial pressures of N2O and SiH4 gases in the reaction chamber. In order to induce the phase separation on SiO2 and Si nanostructures the samples are annealed at the temperatures 900– 1...

Results on design, fabrication, and testing of silicon micromachined magnetic actuators are presented. Electroplated, low-stress permalloy (Ni80Fe20) material is the medium for magnetic interaction and force generation. The permalloy piece is supported by a structural plate, which consists of polycrystalline silicon thin film prepared by low-pressure chemical vapor deposition (LPCVD). Magnetic ...

An economical analysis of the LPCVD hot wall tubular reactor functioning is presented including equipment amortization, clean room location, supplies, maintenance, labor, gas and energy consumption. From a technical point of view, CVDl model is used to characterise the phenomena involved during polysilicon deposition, linking growth rate distribution to operating conditions. An optimization is ...

The electrical properties of polymeric thin film transisitors (P-TFTs) based on poly(9,9-dioctylfluorene-cobithiophene) alternating copolymer (F8T2) have been studied. Device performance was compared for amorphous silicon nitride deposited by LPCVD and PECVD techniques, aluminum oxide deposited by sputtering, titanium oxide deposited by sputtering, and thermal silicon oxide gate dielectrics. A ...