An analytical model is proposed for the random dopant fluctuation (RDF) in a symmetric double-gate metal-oxidesemiconductor field-effect-transistor (DG MOSFET) in the subthreshold region. Unintended impurity dopants cannot be absolutely prevented during the device fabrication; hence, it is important to analytically model the fluctuations in the electrical characteristics caused by these impurit...

Aberration corrected high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) was employed to study the distribution of barium atoms on the surfaces and in the interiors of boron carbide based nanowires. Barium based dopants, which were used to control the crystal growth, adsorbed to the surfaces of the boron-rich crystals in the form of nanometer-thick surficial fil...

Chemical doping offers promise as a means of tailoring the electrical characteristics of organic molecular compounds. However, unlike for inorganic semiconductors used in electronics applications, controlling the influence of dopants in molecular complexes is complicated by the presence of multiple doping sites, electron acceptor levels, and intramolecular correlation effects. Here we use scann...

Hydrogen interaction with bimetallic Au(Pd) and Au(Rh) systems are studied with the density functional theory (DFT)-based periodic approach. Several bimetallic configurations with varying concentrations of Pd and Rh atoms in the under layer of a gold surface(111) were considered. The reactivity of the doped Au(111) toward hydrogen adsorption and absorption was related to the property modificati...

In two-dimensional (2D) colloidal semiconductor nanoplatelets, which are atomically flat nanocrystals, the precise control of thickness and composition on the atomic scale allows for the synthesis of heterostructures with well-defined electron and hole wave function distributions. Introducing transition metal dopants with a monolayer precision enables tailored magnetic exchange interactions bet...

Alloys of GaN, InN and AlN provide an ideal host with a wide range of the electronic bandgap but it is due to the control of impurities that allows to form devices. The role of unintentional impurities becomes especially important when their role as dopants is not established and their incorporation remains undetected. Oxygen concentrations up to some 10 cm are present in any high purity GaAs, ...

Disorder on the active d element site is usually very disruptive for conduction and long range order in perovskite transition metal oxides. However, in the background of phase competition such ‘B site’ dopants also act to promote one ordered phase at the expense of another. This occurs either through valence change of the transition metal or via creation of ‘defects’ in the parent magnetic stat...

Adoption of the Li þ site for chromium dopants in lithium tetraborate