نتایج جستجو برای: magnetic semiconductor

تعداد نتایج: 395120  

Journal: :IEEJ Transactions on Electronics, Information and Systems 1990

2017
Heng-Fu Lin Woon-Ming Lau Jijun Zhao

Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole densi...

2008
Sujeet Chaudhary

Solid solution between nonmagnetic narrow gap semiconductor FeSi and diamagnetic semi-metal CoSi gives rise to interesting metallic alloys with longrange helical magnetic ordering, for a wide range of intermediate concentration. We report various interesting magnetic properties of these alloys, including low temperature re-entrant spin-glass like behaviour and a novel inverted magnetic hysteres...

Journal: :Physical review letters 2006
C A Marlow R P Taylor M Fairbanks I Shorubalko H Linke

We use magnetoconductance fluctuation measurements of phase-coherent semiconductor billiards to quantify the contributions to the nonlinear electric conductance that are asymmetric under reversal of magnetic field. We find that the average asymmetric contribution is linear in magnetic field (for magnetic flux much larger than 1 flux quantum) and that its magnitude depends on billiard geometry. ...

1998
M. Dinu I. Miotkowski D. D. Nolte

Magnetic fields selectively quench phase conjugation during photorefractive four-wave mixing experiments in the diluted magnetic semiconductor Cd12xMnxTe. Phase conjugation using circularly polarized light fields differentiates between the time-reversed and non-time-reversed components of the four-wave mixing signal. The experimental results establish the connection between the removal of time-...

2017
Sruthi Radhakrishnan Deya Das Atanu Samanta Carlos A de Los Reyes Liangzi Deng Lawrence B Alemany Thomas K Weldeghiorghis Valery N Khabashesku Vidya Kochat Zehua Jin Parambath M Sudeep Angel A Martí Ching-Wu Chu Ajit Roy Chandra Sekhar Tiwary Abhishek K Singh Pulickel M Ajayan

We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The obser...

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