We have isolated the effect of kinetic energy of depositing species during pulsed laser deposition (PLD) on surface morphology evolution of Ge(001) homoepitaxy at low temperature (100 °C). Using a dual molecular beam epitaxy (MBE)-PLD chamber, we compare morphology evolution from three different growth methods under identical experimental conditions except for the differing nature of the deposi...

An increasing number of philosophers of social sciences and of social scientists are getting interested in the relevance of mechanism-based explanations (MBE) in the social sciences. According to MBE, we explain a phenomenon by revealing the mechanism(s) responsible for its occurrence. In the social sciences, MBE has been particularly endorsed by analytical sociology. According to several propo...

An attempt was made to achieve high-performance 1.55I m semiconductor laser diodes based on the InGaAlAs material system with solid-source molecular beam epitaxy (MBE) technology. The primary motivation for this attempt was the possibility for enhanced QW laser performance with large conduction band offsets provided by InGaAlAs which, furthermore, can be realized with toxic-gas-free solid-sourc...

The maturing of model-based engineering (MBE) has led to an increased interest and demand on the verification of MBE artifacts. Numerous verification approaches have been proposed in the past and, in fact, due to their diversity it is sometimes difficult to determine whether a suitable approach for the verification task at hand exists. In the first part of this tutorial, we thus present a class...

In this article we report on two dimensional sheet charge and mobility in GaN/AlGaN heterostructure field effect transistors. Both experimental and theoretical results are presented. Experimental results are reported on samples grown by metal organic chemical vapor deposition ~MOCVD! and molecular beam epitaxy ~MBE!. Theoretical studies are done to examine how spontaneous polarization and piezo...

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited...

It has been observed experimentally that under certain conditions, pulsed laser deposition (PLD) produces smoother surfaces than ordinary molecular beam epitaxy (MBE). So far, the mechanism leading to the improved quality of surfaces in PLD is not yet fully understood. In the present work, we investigate the physical properties of a simple model for PLD, in which the transient mobility of adato...

Understanding the correlation between film structure and its ferromagnetic properties is very important for applications. To this end, we have investigated epitaxial and smooth Ni films grown on MgO substrates using molecular beam epitaxy (MBE) and dc sputtering. To establish correlation between film morphology and structure with magnetic properties, we have used in situ and ex situ scanning tu...

A number of manufacturing companies have reported anecdotal evidence describing the benefits of Model-Based Enterprise (MBE). Based on this evidence, major players in industry have embraced a vision to deploy MBE. In our view, the best chance of realizing this vision is the creation of a single "digital thread." Under MBE, there exists a Model-Based Definition (MBD), created by the Engineering ...

This report covers the period of June 1, 2013–May 31, 2014. Due to the ongoing success of Molecular Biology and Evolution (MBE) and Genome Biology and Evolution (GBE), whose revenues continue to increase, the society remains in outstanding financial health. Society membership decreased marginally during financial year 2013: Membership-only subscriptions decreased from 732 in 2012 to 332 in 2013...