GaAs-based heterostructures grown by metalorganic vapor-phase epitaxy on virtual Ge/Si substrates using an AlxGa1-xAs seed layer with different aluminum content x in the solid solution are investigated. The effect of composition density and size antiphase domains emerging sample surface optical properties GaAs is shown. Si(100) a small unintentional miscut 0.7° to [110] were used for growth.

Thick GaN layers with a low concentration of defects are the key to enable next-generation vertical power electronic devices. Here, we explore hot-wall metalorganic chemical vapor deposition (MOCVD) for development homoepitaxy. We propose new approach grow high-quality homoepitaxial in N2-rich carrier gas and at higher supersaturation as compared heteroepitaxy. develop low-temperature an optimu...

We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximu...

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Distributed Bragg reflectors with up to 21 periods consisting of AlN and Al 0.58 Ga 0.42 N layers were grown by metalorganic chemical vapor deposition. A periodic structure and good interface quality was verified by both transmission electron microscopy and X-ray diffraction, and was shown to be dependent on the composition of the underlying AlGaN base layer. Reflectivities of 49.8% at 285 nm a...

GaN was grown on porous silicon (PS) substrates by Metalorganic Vapour Phase Epitaxy at temperature of 1050 8C. An additional AlN buffer layer is used between GaN and PS. The crystalline quality and surface morphology of GaN films were studied by X-ray diffraction and scanning electron microscope (SEM), respectively. Preferential growth of hexagonal GaN with h00.1i direction is observed and is ...