A low-voltage and low-power RF mixer for WCDMA applications is presented. The paper presents a novel topology mixer that leads to a better performance in terms of isolation and power consumption for low supply voltage. The measuring results of the proposed mixer achieve: 7dB power conversion gain, 10.4dB double side band (DSB) noise figure, -2dBm input third-order intercept point (IIP3), and th...

A 3–8 GHz broadband mixer is presented in this paper. This broadband mixer is low power and high conversion gain. It provides current reuse and ac-coupled folded switching. This mixer is designed in TSMC 0.18-μm CMOS technology. This broadband mixer achieves simulated conversion gain of 9 ± 1.5 dB, a single sideband noise figure lower than 15.2 dB and IIP3 batter than −7 dBm. From 3–8GHz, at su...

A theoretical and experimental study was performed on convective micro mixing in T-shaped micro mixers. In these devices symmetric laminar vortices are developing at low Reynolds numbers Re. The symmetry breaks up with increasing Re numbers. This leads to an enormous enhancement of the mass transfer in the mixing channel. Numerical simulations of the flow characteristics and mixing behaviour ar...

Recently, a next-generation heterodyne mixer detector— a hot electron bolometer (HEB) mixer employing a superconducting microbridge—has gradually opened up terahertz-band astronomy. The surrounding state-of-the-art technologies including fabrication processes, 4 K cryostats, cryogenic low-noise amplifiers, local oscillator sources, micromachining techniques, and spectrometers, as well as the HE...

The characterization of a 1.1-1.7 THz planar Schottky-diode mixer is described. Initial measurements yielded a mixer noise temperature of 5900 K (DSB) and conversion loss of 12 dB (DSB) at 1.57 THz. The responsivity of the mixer was measured to be higher than 200-400 V/W over the frequency range 1.1-1.5 THz. Also, the same diode was used as a 2nd harmonic mixer as part of a solid-state 1.45-1.5...

Absrracl A highly linear CMOS RF amplifier and mixer circuits adopting MOSFET transconductance linearization bv linearlv suoemosine several commonTherefore it is very important to linearize MOSFET transconductance for both RF amplifier and mixer circuits. We have shown that multide eated transistor (MGTR) 111 ~ _ . source FET transistors in parallel, combined with some additional circuit techni...

We describe the design, fabrication, and the performance of a low-noise dual-polarized quasi-optical superconductor insulator superconductor (SIS) mixer at 550 GHz. The mixer utilizes a novel crossslot antenna on a hyperhemispherical substrate lens, two junction tuning circuits, niobium trilayer junctions, and an IF circuit containing a lumped element 180 hybrid. The antenna consists of an orth...

A planar millimeter-wave third-harmonic mixer with low conversion loss is proposed. The mixing circuit consists of a substrate-integrated waveguide (SIW) balun, a pair of diodes, a diplexer and microstrip matching circuit. The mixer is ideal for use as down-converter and up-converter. For a fixed intermediate frequency (IF) of 2 GHz, the mixer has an up-conversion loss of 14.5-15.6 dB and a dow...

Using a superconducting circuit, the Josephson mixer, we demonstrate the first experimental realization of spatially separated two-mode squeezed states of microwave light. Driven by a pump tone, a first Josephson mixer generates, out of quantum vacuum, a pair of entangled fields at different frequencies on separate transmission lines. A second mixer, driven by a π-phase shifted copy of the firs...

This paper presents the design and analysis of Ultra Wideband (UWB) mixer in 65nm CMOS technology. To achieve the optimized performance, a new mixer topology is suggested. The performance parameters of the mixer viz.: conversion gain, Noise Figure, linearity and power consumption are addressed in this paper. The simulation results of the new mixer topology suggested in this paper achieves the r...