Understanding and Controlling Crosstalk between Parallel Molecular Wires Matthew G. Reuter,* Gemma C. Solomon, Thorsten Hansen, Tamar Seideman, and Mark A. Ratner Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States Nano-Science Center and Department of Chemistry, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen Ø Denmark Department of Ch...

We report a first-principles study of electrical transport in a single molecular conductor consisting of a buthane-dithiol sandwiched between two Au (100) electrodes. We show that the current was increased by increasing of the external voltage biases. The projected density of states (PDOS) and transmission coefficients (T(E)) under various external voltage biases are analyzed, and it suggests t...

In this study, Polyaniline molecule (emeraldine base) is modeled as a molecular wire and the effects of the metal/molecule coupling strength and the molecule length on the current-voltage (I-V) characteristics are numerically investigated. Using a tight-binding Hamiltonian model, the methods based on Non-equilibrium Green’s function theory, Landauer formalism and Newns-Anderson model, our calcu...

The purpose of this study was to assess the removability and biological reactivity of an ultrahigh molecular weight polyethylene (UHMWPE) fiber cable as a new biomaterial for osteosynthesis. We used a pull-out test and an implantation test to analyze the performance of the UHMWPE fiber cable using a dog model, and compared its characteristics with those of a wire cable and a soft wire. In the p...

Molecular dynamics simulations are performed to investigate the buckling properties of [100]-, [110]-, [111]-, and [112]-oriented single-crystalline germanium nanowires under uniaxial compression. The effects of simulation temperature, strain rate, and wire length on the buckling behaviour are investigated. The simulation results indicate that critical load clearly decreases with increasing tem...

Here we employ self-assembled Mg-doped GaN nanowires (NWs) grown by plasma assisted molecular beam epitaxy on Si(111) substrates to fabricate piezogenerators. We first discuss the fabrication and testing of rigid nanowire-based generators and then a flexible generator prototype is shown.

There is a growing interest in atomic layer deposition (ALD) of metals for ultra-large-scale integrated circuit (ULSIC) manufacturing. Radical-enhanced ALD (REALD) utilizing plasma (PEALD) has been proposed to grow a number of metals [1]. In our work, we investigate an alternative approach to REALD without plasma, i.e. replacing plasma by a hot (up to 2000 oC) tungsten (W) wire. In this so-call...