Technologies for designing and building microelectronics-based computational equipment have been steadily advancing ever since the first commercial discrete circuits (ICs) were introduced in the late 1950s (1) (monolithic integrated circuits were introduced in the 1960s). As predicted by Moore's law in the 1960s (2), integrated-circuit density has been doubling approximately every 18 months, an...

The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3 10 GHz microwave monolithic integrated circuit (MMIC). The proposed UWB LNA amplifier was implemented with both co-planer waveguide (CPW) layout and 0.15 μm G...

Abstract: A new circuit realization for OTA-C current-mode comb filter is proposed to remove the undesirable multiple frequency signals. The proposed filter uses only OTAs and capacitors, hence suitable for monolithic integrated circuit implementation. The proposed OTA-C comb filter is simulated in PSPICE using a behavioral macro-model of the OTA as well with a practical CMOS OTA circuit. The w...

This paper presents a new negative resistance (NR) network which is designed to compensate losses in a distributed amplifier (CDA). The byproduct of the new NR network in the CDA is significant improvement of bandwidth (~20%). The simplicity of the NR network makes it amenable to MMIC technology and for other applications too.

This paper describes latest RF Automated Test Equipment (RF ATE) technologies that include device under test (DUT) connections, a calibration method, and an RF test module mainly focusing on low cost of test (COT). Most important respect for low COT is how achieve a number of simultaneous measurements and short test time as well as a plain calibration. We realized these respects by a newly prop...

Newly developed multi-layer inductors on GaAs threedimensional MMICs are presented. We analyzed single-, double-, triple-, and quadruple-layer stacked-type inductors in what may be the first report on inductors on a GaAs MMIC with three or more layers. The performance of singleand multi-layer inductors was measured and calculated by electromagnetic field simulation. The multi-layer inductors pr...

This paper reports the design of a Ka-band Equilateral triangular patch antenna (ETPA) fabricated using postCMOS and post-MMIC compatible process technology. The antenna uses an air-cavity underneath the patch radiator that is supported on thin dielectric membrane. The antenna structure was analysed and optimised using the finite element method (FEM) based Agilent High Frequency Structure Simul...

This paper describes the design and simulation of an innovative monolithic active balun integrated with low noise amplifier. The Single-ended-to-differential signal transformation circuit comprises a differential signal generation circuit, which is able to receive a single-ended signal and generate a pair of signals having a 180o (differential) relationship phase. The fully integrated circuit w...

In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT) high electron mobility transistor technologies. Starting with a modulator-driver MMIC for optical transmission systems, we describe state of the art MMICs like a 94 GHz low-noise amplifier, a 35 GHz and a 60 GHz medium power amplifier and finally we demonstrate the feasibility of a monolithicall...

The basic active and passive elements for a 50 nm InGaAs-InAlAs-InP HEMT process with pseudomorphic InGaAs channel have been realized. The design and fabrication of 50 nm gate length InP HEMTs, MIM capacitors and thin film resistors have been studied. The integration of the components in a microstrip-based MMIC process has been proven by the successful demonstration of a wideband amplifier.