We have studied the reliability of intrinsic SiN MIM capacitors designed for 48 V and 125 0 C operation and manufactured in a GaN process flow. It is shown that very small area capacitors (10um x 10um) with a dielectric thickness of 400nm exhibit lifetimes as long as 1.48E10 hours under such conditions.

A personal communications service/wide-band code division multiple access (PCS/W-CDMA) dual-band monolithic microwave integrated circuit (MMIC) power amplifier with a single-chip MMIC and a single-path output matching network is demonstrated by adopting a newly proposed on-chip linearizer. The linearizer is composed of the base–emitter diode of an active bias transistor and a capacitor to provi...

Recently there is significantly increasing interest in the development of THz devices and circuits. Different from the MMIC device and circuit technologies, THz devices approach to the electrical limit of semiconductors and passive THz circuit elements have much less dimension tolerance. Therefore, device and circuit technologies concerning to such limitations have to be reconsidered and modifi...

This article reports on the first Schottky diode frequency doubler with a split-block waveguide structure fabricated by high-precision stereolithography (SLA) printing process. The printed polymer parts were plated copper and thin protective layer of gold. surface roughness has been characterized critical dimensions measured, revealing good quality as well dimensional accuracy that meets tight ...

This paper presents a broadband GaN pseudo high-electron-mobility transistor (pHEMT) two-stage driver amplifier based on an enhanced feedback technique for wideband system. Through well-designed parameter values of the and matching structure circuit, relatively flat frequency response was obtained over wide band. Simultaneously, in order to reduce fluctuation current caused by environmental tem...

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This paper presents the progress of monolithic technology for microwave application, focusing on gallium nitride technology advances in the realization of integrated power amplifiers. Three design examples, developed for microwave backhaul radios, are shown. The first design is a 7 GHz Doherty developed with a research foundry, while the second and the third are a 7 GHz Doherty and a 7–15 GHz d...

This paper focuses on InP-based, HEMT Monolithic Millimeter-wave Integrated Circuit (MMIC) power amplifiers for applications to heterodyne receivers, transmitters, and communications circuits. Recently, we have developed several HEMT MMIC circuits using HRL Laboratories’ 0.1 um InP HEMT technology with unprecedented high frequency performance and output power. Our results include an 80 GHz band...

This paper focuses on InP-based, HEMT Monolithic Millimeter-wave Integrated Circuit (MMIC) power amplifiers for applications to heterodyne receivers, transmitters, and communications circuits. Recently, we have developed several HEMT MMIC circuits using HRL Laboratories' 0.1 um InP HEMT technology with unprecedented high frequency performance and output power. Our results include an 80 GHz band...

Analysis and design techniques for designing a lumped-element 3-dB quadrature coupler with wide-band flat coupling are proposed for microwave integrated-circuit/monolithic-microwave integrated-circuit applications. The proposed design technique can produce a coupler with flat coupling over 50% fractional bandwidth, which is wider than the conventional lumped-element design methods. A prototype ...