The present study was conducted to investigate current density of0.3 0.7 Al Ga N/ GaN multiple quantum well solar cell (MQWSC) under hydrostaticpressure. The effects of hydrostatic pressure were taken into account to measureparameters of 0.3 0.7 Al Ga N/ GaN MQWSC, such as interband transition energy, electronholewave functions, absorption coefficient, and dielectric con...

P-type conducting layers are critical in GaN-based devices such as LEDs and laser diodes. Such layers are often produced by doping GaN with Mg, but the hole concentration can be enhanced using AlGaN/GaN p-type superlattices by exploiting the built-in polarisation fields. A Mg-doped AlGaN/GaN superlattice was studied using SIMS. Although the AlGaN and GaN were nominally doped to the same level, ...

A GaN-based heterostructure barrier diode (HBD) similar to GaAs planar-doped barrier diodes is demonstrated. Instead of doping with impurities, the polarization-induced sheet charge at the III-nitride heterojunction behaves as an effective δ-doping. An AlGaN/GaN heterostructure is used for the demonstration. The rectifying characteristics of the polarizationinduced GaN HBDs can be tuned by cont...

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We report on the temporal pulse response measurements of solar-blind AlxGa1−xN-based heterojunction p–i–n photodiodes. High-speed characterization of the fabricated photodiodes was carried out at 267 nm. The bandwidth performance was enhanced by an order of magnitude with the removal of the absorbing p+ GaN cap layer. 30 μm diameter devices exhibited pulse responses with ∼70 ps pulse width and ...

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Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function. NWs surface roughness have important role in gas sensors performance. In this research, GaN NWs have been synthesized on Si substrate by plasma-assisted vapor phase deposition at different deposition time, ...

Synchrotron-based x-ray radiation has been utilized to measure time-resolved x-ray excited optical luminescence (TR-XEOL) from InGaN/GaN multiple quantum well (MQW) structures. Excess carrier recombination lifetimes were determined for MQWs grown on conventional c-plane as well as on non-polar m-plane substrates. In addition, the simultaneous measurement of XEOL and x-ray fluorescence reveals a...

Please cite this article in press as: R. Dahal et a Er-doped III-nitride semiconductors have emerged as very attractive materials to achieve photonic devices with multiple functionalities for photonic integrated circuits (PICs). Optical sources and amplifiers based on these materials, particularly GaN and InGaN alloys, can operate at 1.54 lm and are expected to be temperature insensitive and ha...

Abstract This paper presents a comparative study of electron transport phenomena in n-type gallium nitride strongly doped, above the Mott transition, with silicon and germanium. The samples under were grown by molecular beam epitaxy, metal-organic vapor phase epitaxy halide epitaxy. temperature dependence resistivity Hall Effect was investigated at temperatures ranging from 10 K up to 650 K. me...