The novel characteristics of a new Schottky rectifier structure, known as the lateral merged double Schottky (LMDS) rectifier, on 4H-SiC are explored theoretically and compared with those of the compatible conventional 4H-SiC Schottky rectifiers. The anode of the proposed lateral device utilizes the trenches filled with a high barrier Schottky (HBS) metal to pinch off a low barrier Schottky (LB...

To achieve high performance Ge nMOSFETs it is necessary to reduce the metal/semiconductor Schottky barrier heights at the source and drain. Ni/Ge and NiGe/Ge Schottky barriers are fabricated by electrodeposition using n-type Ge substrates. Current (I)–voltage (V) and capacitance (C)–voltage (V) and low temperature I–V measurements are presented. A high-quality Schottky barrier with extremely lo...

We theoretically study the efficiency limits and performance characteristics of few-layer graphene–semiconductor solar cells (FGSCs) based on a Schottky contact device structure. model compare power conversion (PCE) various configurations by explicitly considering non-Richardson thermionic emission across graphene/semiconductor heterostructures. The calculations reveal that ABA-stacked trilayer...

The effect of chloride ions concentration on the electrochemical behavior of AISI 410 stainless steel in the simulated concrete pore (0.1 M NaOH + 0.1 M KOH) solution was investigated by various electrochemical methods such as Potentiodynamic polarization, Mott–Schottky analysis and electrochemical impedance spectroscopy (EIS). Potentiodynamic polarization curves revealed that increasing chlori...

In this paper, underlap channel dopant-segregated Schottky barrier (DSSB) SOI MOSFET has been proposed, in which the increased effective channel length (Leff) due to underlap channel at both source/drain (S/D) sides reduces the leakage currents, short-channel effects and the parasitic capacitances as compared to overlap channel DSSB SOI MOSFET. Although in strong inversion the voltage drop acro...

Plasmonic resonators, which can enhance the near-field due to plasmon excitation, have attracted extensive research interest their significant potential in photodetection, photocatalysis, photovoltaics, and other applications. Here, we experimentally present spectroscopic results of plasmonic resonances on large-area nanoscale silver (Ag) gratings, fabricated by optical interference lithography...

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Schottky contacts, formed at metal/semiconductor interfaces, always have a large impact on the performance of field-effect transistors (FETs). Here, we report the experimental studies of Schottky contacts in two-dimensional (2D) transition metal dichalcogenide (TMDC) FET devices. We use scanning photocurrent microscopy (SPCM) to directly probe the spatial distribution of the in-plane lateral Sc...

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