A simple yet effective approach to improve the linearity of transconductor-capacitor ( Gm-C ) filters is proposed without any area or power overhead. Following a generalized nodal analysis, transconductors classical filter topology are rewired such that their input differential volta...

In this paper, a differential multi-band CMOS low noise amplifier (LNA), operated in a wide range from 800MHz~1700MHz, with wide-band interference rejection, linearity improvement and the capacitive cross-coupling technology, is proposed. The proposed differential multi-band CMOS low noise amplifier with high linearity performance and good interference rejection performance. The post-simulation...

Carrier aggregation is one of the key features to increase the data rate given a scarce bandwidth spectrum. This paper describes the design of a high performance receiver suitable for carrier aggregation in LTE-Advanced and future 5 G standards. The proposed architecture is versatile to support legacy mode (single carrier), inter-band carrier aggregation, and intra-band carrier aggregation. Per...

The effects of hot-carrier stress (HCS) on the performance of NMOSFETs and a fully integrated low noise amplifier (LNA) made of NMOSFETs in a 0.18 lm CMOS technology are studied. The main effects of HCS on single NMOSFETs are an increase in threshold voltage and a decrease in channel carrier mobility, which lead to a drop in the biasing current of the transistors. In the small-signal model of t...

this project aims to design and implement a new Cognitive Radio (CR) receiver targeting the IEEE 802.22 standard as the first world-wide CR standard. In fact, this project starts with a study and a comparison of various CR receivers. This study leads to the presentation of a new approach that was adopted based on sub-band sensing technique for a CR receiver. In addition, we demonstrate a system...

The interface trap charges (ITC) associated reliability analysis of a charge-plasma based asymmetric double-gate (ADG) dopingless tunnel field effect transistor (DLTFET) with Si/Ge heterojunction and high-κ gate dielectric (HJADGDLTFET) has been studied. HJADGDLTFET uses silicon at the drain channel region, germanium source which enhances band-to-band tunnelling source-channel junction, hence d...

Variable-gain amplifier (VGA) is one of the basic building blocks of many communication systems. In this paper we present a novel structure of VGA with 22 db of gain range and 220 MHz of bandwidth frequency variation. This circuit combines a voltage to current (V-I) converter and two-stage CMOS amplifier to achieve programmable gain and bandwidth .The gain is varied by changing the input voltag...

A widely tunable 4th order BPF based on the subtraction of two 2nd order 4-path passive-mixer filters with slightly different center frequencies is proposed. The center frequency of each 4-path filter is slightly shifted relative to its clock frequency (one upward and the other one downward) by a gm-C technique. Capacitive splitting of the input signal is used to reduce the mutual loading of th...

The variation of the temperature-dependent performance an electronic device is one major concerns in predicting actual electrical characteristics as bandgap semiconducting material varies with temperature. Therefore, this article, we investigate impact temperature variations ranging from 300 to 450K on DC, analog/ radio frequency, and linearity dual stack gate oxide-source dielectric pocket-tun...

A new approach for designing an ultra wideband (UWB) CMOS low noise amplifier (LNA) is presented. The aim of this design is to achieve a low noise figure, reasonable power gain and low power consumption in 3.1-10.6 GHz. Also, the figure of merit (FOM) is significantly improved at 180nm technology compared to the other state-of-the-art designs. Improved π-network and T-network are used to obt...