نتایج جستجو برای: oxide film

تعداد نتایج: 260004  

2012
Chih-Hsiung Hsu Dong-Hwang Chen

Aluminum-doped zinc oxide (AZO) nanorod array thin film with hydrogen treatment possesses the functions of transparent conducting oxide thin film and 1-D nanostructured semiconductor simultaneously. To enhance the absorption in the visible light region, it is sensitized by cadmium sulfide (CdS) nanoparticles which efficiently increase the absorption around 460 nm. The CdS nanoparticles-sensitiz...

2005
Emile D. L. Rienks Niklas Nilius Hans-Peter Rust Hans-Joachim Freund

We have studied a thin FeO film on Pts111d using scanning tunneling microscopy. The corrugation of the Moiré pattern, that arises due to a lattice mismatch between the oxide film and the substrate, is found to increase dramatically when the microscope is operated in the field-emission regime. This contrast enhancement can be attributed to variations in the energy at which field-emission resonan...

2015
Lado Filipovic Siegfried Selberherr

The integration of gas sensing elements into hand-held electronics will provide individuals the ability to detect harmful chemicals and pollutants in the environment in real time. Metal oxide gas sensors rely on changes in their electrical conductance due to the interaction of the oxide with a surrounding gas at an elevated temperature. The intrinsic stress in the metal oxide films during the l...

2011
V. JEEVANA JYOTHI

The kinetics of anodic oxidation of zircaloy-2, zircaloy-4, titanium and niobium have been studied in 0.1M sodium methoxide without and with addition of a millimole of sodium phosphate at a constant current density of 8mA.cm-2 and at room temperature (300 K). the addition of phosphate ions found to improve the kinetics of film formation. This trend and mechanism of anodic oxide film growth is c...

Journal: :Physical review letters 2012
F Mittendorfer M Weinert R Podloucky J Redinger

We investigate the magnetic ordering in the ultrathin c(10×2) CoO(111) film supported on Ir(100) on the basis of ab initio calculations. We find a close relationship between the local structural properties of the oxide film and the induced magnetic order, leading to alternating ferromagnetically and antiferromagnetically ordered segments. While the local magnetic order is directly related to th...

2012
En Yang Hoan Ho David E. Laughlin Jian-Gang Zhu

Related Articles Densification of functional plasma polymers by momentum transfer during film growth Appl. Phys. Lett. 101, 211603 (2012) Ultrathin Si/C graded layer to improve tribological properties of Co magnetic films Appl. Phys. Lett. 101, 191601 (2012) Temperature and pressure dependent Mott potentials and their influence on self-limiting oxide film growth Appl. Phys. Lett. 101, 171605 (2...

2002
Balaji Krishnamurthy Ralph E. White Harry J. Ploehn

We present a simplified point defect model to describe the growth of the primary passive oxide film on the surface of iron. The model postulates a reduced set of elementary interfacial reactions to describe the formation and dissolution of the oxide film. By casting the model in dimensionless form, we obtain a relatively small set of parameters that must be assigned values. Parameter values are...

2015
Baojun Yan Shulin Liu Yuekun Heng

Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control t...

2010
R. Sarma D. Saikia P. Saikia P. K. Saikia R. Sharma

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10 cm/V.s, ON-OFF ratio 3.3x10, sub-threshold swing 0.06 V/d...

Graphene oxide (GO) thin films were simply deposited on fluorine doped tin oxide (FTO) substrate via a low-voltage electrodeposition. The GO and GO thin films were characterized by Zeta Potential, X-ray diffraction, Ultraviolet-Visible spectroscopy, atomic force microscopy, Fourier transform infrared spectroscopy, field emission scanning electron microscopy and energy dispersive X-ray spectrosc...

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