نتایج جستجو برای: oxynitride thin films
تعداد نتایج: 181302 فیلتر نتایج به سال:
Capacitors with ultra-thin (6.0–12.0 nm) CVD Ta2O5 film were fabricated on lightly doped Si substrates and their leakage current (Ig–Vg) and capacitance (C–V ) characteristics were studied. For the first time, samples with stack equivalent oxide thickness around 2.0 nm were compared with ultra-thin silicon dioxide and silicon oxynitride. The Ta2O5 samples showed remarkably lower leakage current...
In this paper, preparation and characterization of a-SiNx thin films deposited by LPCVD method from free radicals of TCS and NH3 gaseous system were investigated. These radicals are made by passing each of the precursor gases separately over Pt-Ir/Al2O3 catalyst at the temperature of 600 ᐤC. Kinetics of this process was investigated at different total pressures, NH3/TCS flow rate ratios and te...
In this research, ZnO thin films with Al impurity as dopant were coated onto cleaned glass substrates by the spray pyrolysis technique. Crystal structure of the thin films was studied via XRD, and UV-vis spectroscopy was carried out to investigate their optical properties. Finally, in order to study the effect of Al impurity in ZnO thin films, the band structures of both pure and doped systems ...
copper thin films with nano-scale structure have numerous applications in modern technology. in this work, cu thin films with different thicknesses from 50–220 nm have been deposited on glass substrate by dc magnetron sputtering technique at room temperature in pure ar gas. the sputtering time was considered in 4, 8, 12 and 16 min, respectively. the thickness effect on the structural, morpholo...
Nowadays, II – IV group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. Cadmium zinc sulfide (Zn-CdS) thin films were grown by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) is used to analyze the structure and crystallite ...
Nowadays, II – IV group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. Cadmium zinc sulfide (Zn-CdS) thin films were grown by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) is used to analyze the structure and crystallite ...
Nickel films with the thicknesses of 30 and 120 nm were deposited on glass substrates, at different substrate temperatures (313 to 600 K) under uhv condition. The nano-structure of the films and mean diameter of grains was obtained for each films using atomic force microscopy (AFM). Their optical properties were measured by spectrophotometry in the spectral range of 190-2500 nm. Kramers-Kronig ...
CdTe thin films with 2.8 µm thickness were deposited by electron beam evaporation method. X-ray diffraction, scanning electron microscopy, UV-Vis-NIR spectroscopy and atomic force microscopy (AFM) were used to characterize the films. The results of AFM analysis revealed that the CdTe films have uniform surface. CdTe thin films were heat-treated by SnCl2 solution. Structural analysis using XRD s...
the effect of evaporation rate on structural, morphological and optical properties of electron beam evaporated cds thin films have been investigated. cds thin film deposited by electron beam evaporation method in 12nm/min and 60nm/min evaporation rates on glass substrates. x-ray diffraction, scanning electron microscopy, uv-vis-nir spectroscopy and atomic force microscopy were used to character...
The Boltzmann equation is a semiclassical approach to the calculation of the electrical conductivity. In this work we will first introduce a simple model for calculation of thin film resistivity and show that in an appropriate condition the resistivity of thin films depends on the electron mean free path, so that studying and measurement of thin films resistivity as a function of film thickne...
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