Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices base...

Perfect Cooper pair splitting is proposed, based on crossed Andreev reflection (CAR) in a p-type semiconductor-superconductor-n-type semiconductor (pSn) junction. The ideal splitting is caused by the energy filtering that is enforced by the band structure of the electrodes. The pSn junction is modeled by the Bogoliubov-de Gennes equations and an extension of the Blonder-Tinkham-Klapwijk theory ...

Control of charge carrier distribution in a gated channel via a dielectric layer is currently the state of the art in the design of integrated circuits such as field effect transistors. Replacing linear dielectrics with ferroelectrics would ultimately lead to more energy efficient devices as well as the added advantage of the memory function of the gate. Here, we report that the channel-off/cha...

The ability to send high-speed messages between integrated circuit devices requires both high-frequency receivers and transmitters. The vast majority of integrated circuits are made from silicon-based semiconductors. Suitable receivers of silicon integrated circuits can be constructed from either metal-semiconductor-metal photodiodesl or P-type, intrinsic, N-type (PIN) photodiodes. These receiv...

Semiconductor-metal subwavelength grating (SMSG) can serve a dual purpose in vertical-cavity surface-emitting lasers (VCSELs), as both optical coupler and current injector. SMSGs provide optical as well as lateral current confinement, eliminating the need for ring contacts and lateral build-in optical and current confinement, allowing their implementation on arbitrarily large surfaces. Using an...

Using first-principles calculations, we study the structural and electronic properties of bilayer SnS/graphene, SnS/bilayer graphene (AA-stacked), (AB-stacked) monolayer SnS/ graphene/monolayer SnS van der Waals (vdW) heterostructures. Electronic all components vdW heterostructures are well preserved, which reflects weakness interaction. In cases SnS/graphene an Ohmic contact is formed can be t...

The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonst...