نتایج جستجو برای: physical vapor deposition

تعداد نتایج: 775081  

2009
R. I. BADRAN S. AL-HENITI F. S. AL-HAZMI A. A. AL-GHAMDI J. LI S. XIONG

The influence of change in deposition conditions of silane concentration and substrate temperature on optical properties of hydrogenated microcrystalline silicon thin film samples prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, are investigated. The crystalline volume fraction for the samples determined from Raman spectra are correlated with the silane concentration, su...

Journal: :Bulletin of the Japan Institute of Metals 1990

Journal: :international journal of nano dimension 0
n. parsafar research institute of applied sciences, academic center of education, culture and research (acecr), shahid beheshti university, tehran, iran. a. ebrahimzad research institute of applied sciences, academic center of education, culture and research (acecr), shahid beheshti university, tehran, iran.

tellurium nanostructures have been prepared by physical vapor deposition method in a tube furnace. the experiments were carried out under argon gas flow at a pressure of 1 mbar. tellurium powder was evaporated by heating at 350°c and 430°c and was condensed on substrates at 110–250°c, in the downstream of argon gas flow. the products were characterized by field emission scanning electron micros...

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