217 Abstract—As silicon devices shrink and their density increases, the low dielectric constant materials instead of SiO 2 film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at 300~500 ℃ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant u...

Two sets of hydrogenated microcrystalline silicon thin-film samples were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique at different deposition conditions of excited power and pressure. The correlation between the crystalline volume fraction for the samples determined from Raman spectra and the excited power, pressure, absorption coefficient, refractive index and optica...

The simultaneous generation of dust during the deposition of semiconducting thin films by radio frequency plasma enhanced chemical vapor deposition has so far been regarded as a troublesome by-product. However, we present results from recent microstructural investigations of carbonaceous dust particles from a methane precursor that demonstrate that the technique may be suited to generating full...

When prepared by conventional evaporation or sputtering, thin films of amorphous silicon contain a large concentration of defects and microvoids.3,4 These give rise to localized states in the energy gap of the material.3,4 Plasma-enhanced chemical vapor deposition (PECVD), using silicon hydrides, significantly reduces the number of defects and thereby lowers the concentration of localized state...

Abstract Cobalt chromium alloys (CoCr) are commonly used as total disc replacement components. However, there concerns about its long-term biological effects. Coating the CoCr with a ceramic could improve implant’s biocompatibility and wear resistance. Silicon nitride (SiNx) coatings have emerged recent alternative to this end. While many evaluated physical vapour deposition (PVD) techniques de...