There is a growing interest in atomic layer deposition (ALD) of metals for ultra-large-scale integrated circuit (ULSIC) manufacturing. Radical-enhanced ALD (REALD) utilizing plasma (PEALD) has been proposed to grow a number of metals [1]. In our work, we investigate an alternative approach to REALD without plasma, i.e. replacing plasma by a hot (up to 2000 oC) tungsten (W) wire. In this so-call...

Here we report the development of a new scalable and transferable plasma assisted atomic layer deposition (PEALD) process for production uniform, conformal pinhole free NiO with sub-nanometre control on commercial ALD reactor.