Porous silicon (PS) multilayer stacks were developed for their use as interference filters in the visible range. The optical behavior of these structures was previously simulated by the use of a computational program, from which the optical constants and thickness of the individual PS layers were determined. The possibility of using these structures as biosensors has been explored, based on the...

This work reports on the possible use of microporous silicon as a temperature sensor. This work is based on previous published works [7, 8, and 9]. The device is based on hydrocarbon group (CHx) / porous silicon (PS) /Si structure. The porous sample was coated with hydrocarbons groups deposited by the plasma of methane /argon mixture. Current–voltage characteristics have been investigated as a ...

A silicon/metal nanocomposite is fabricated by electrochemical deposition of a metal (Ni, Co) into the pores of mesoporous silicon prepared from n-silicon consisting of highly oriented channels which are tunable in a range between 40 nm and 100 nm in their diameter and a concomitant interpore spacing. Fourier transform infrared (FTIR) measurements give details about the top surface as well as t...

To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resona...

In this study, Au:TiO2 nanoparticles (NPs) are prepared by using the laser ablation method in liquid at different energies (600, 800, and1000 mJ). After that, Au: TiO2 NPs were deposited on porous-Si(PS). Porous silicon (PS) is synthesized photo-electrochemical etching (PECE) of n-type crystalline Si (c-Si) wafers (100) orientation. The intensity current density was (4, 12, and 20 mA/cm2), with...

We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the ...

This work deals with the deposition of Cr-doped TiO2 thin films on porous silicon (PS) prepared from electrochemical anodization of multicrystalline (mc-Si) Si wafers. The effect of Cr doping on the properties of the TiO2-Cr/PS/Si samples has been investigated by means of X-ray diffraction (XRD), atomic force microcopy (AFM), photoluminescence, lifetime, and laser beam-induced current (LBIC) me...

GaN films have been grown at 1050 8C on porous silicon (PS) substrates by metalorganic vapour phase epitaxy. The annealing phase of PS has been studied in temperature range from 300 to 1000 8C during 10 min under a mixture of ammonia (NH3) and hydrogen (H2). The PS samples were characterized after annealing by scanning electronic microscope (SEM). We observed that the annealing under the GaN gr...

Different porous silicon (PS) layers were impregnated with rhodamine 6G (Rh) solution in order to form Rh/PS nanocomposites. The effect of the porous matrix (fresh, oxidised, type p) on the propriety of photoluminescence (PL) has been investigated. It was found that the luminescence of this nanocomposite is provided by an energy transfer from PS nanocristallites to rhodamine and from interactio...