This paper focuses on recent results on the optical properties of self-assembled quantum dots involving typeI InGaAs/GaAs and type-II InP/GaAs interfaces. In the first part, we focus on the InGaAs/GaAs quantum dots, that were used to study the influence of a two-dimensional electron gas on the optical emission of single quantum dots. In the second part, we present the results on type-II InP/GaA...

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BACKGROUND One of the most attractive properties of quantum dots is their potential to extend the opportunities for fluorescent and multimodal imaging in vivo. The aim of the present study was to clarify whether the composition and structure of organic coating of nanoparticles are crucial for their application in vivo. METHODS We compared quantum dots coated with non-crosslinked amino-functio...

Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processingstructure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are ...

Inducing strong coupling Quantum dots, or artificial atoms, are being pursued as prospective building blocks for quantum information processing architectures. Communication with other, distant quantum dots requires strong coupling between photons and the electronic states of the dots. Mi et al. used double quantum dots defined in silicon and embedded in a superconducting cavity to achieve such ...

We report the temperature-dependent photoluminescence of single site-controlled and self-assembled InAs quantum dots. We have used nanoimprint lithography for patterning GaAs(100) templates and molecular beam epitaxy for quantum dot deposition. We show that the influence of the temperature on the photoluminescence properties is similar for quantum dots on etched nanopatterns and randomly positi...

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By in...

Articles you may be interested in RHEED transients during InAs quantum dot growth by MBE Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001) Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a " nucleation-augmented " method Appl. Area-controlled growth of InAs quantum dots and improvement of...

in this paper, using the tight-binding model, we extend the real-space renormalization group method to time-dependent hamiltonians. we drive the time-dependent recursion relations for the renormalized tight-binding hamiltonian by decimating selective sites of lattice iteratively. the formalism is then used for the calculation of the local density of electronic states for a one dimensional quant...