Semiconductor lasers are commonly used for storage and retrieval of information in optical data recording systems. A measure of the importance of this emerging optoelectronic technology is provided by the compact-disc players that have already penetrated the consumer electronics market. The same technique is now being extended to the mass storage devices capable of storing gigabytes of informat...

This paper describes the design, fabrication, and record performance of a new class ultra-wideband wavelength tuning, ultra-low noise semiconductor laser, Integrated Coherent Tunable Laser (ICTL). The ICTL device is designed for, fabricated in, CMOS foundry based Silicon Photonics platform, utilizing heterogeneous integration III-V material to create integrated gain section laser–enablin...

The nonlinear interaction between amplified spontaneous emission noise and copropagating signal in a dispersive optical fiber is investigated both theoretically and experimentally. A transfer matrix formulation is used to solve the nonlinear propagation equation. A continuous wave (CW) input optical signal format isolates the effect of modulation instability (MI) from the signal self-phase modu...

We demonstrate a novel, robust and compact fiber laser mode-locked by nonlinear polarization evolution (NPE) in polarization-maintaining (PM) fibers. The reflectivity of the artificial saturable absorber (SA) is analyzed to explain mode-locking mechanism cavity. Experimentally, three linear schemes that feature repetition rates 94 MHz, 124 MHz 133 are systematically investigated. When pump powe...

We propose and experimentally demonstrate that the intensity noise correlation and the noise level of intensity-difference and intensity-sum in Stokes and anti-Stokes channel can be well controlled by the relative nonlinear phase in spontaneous parametric four-wave mixing process. By modulating the relative nonlinear phase, including self-phase modulation and cross-phase modulation, switching t...

<p><span>This study outlines the management of either direct or external modulation semiconductor laser systems for key solution bit rate up to 25 Gb/s under relative intensity noise (RIN) control. The bias and peak currents based equations are optimized achieve max Q factor min error (BER) using first proposed model optical/electrical signal power, ratio also enhanced second model....

High power photodetectors have a made remarkable progress in performance over the last few years with prospective application in high-bit-rate digital receivers with reduced complexity, CATV, analog-to-digital converter, high power RF distribution and optoelectronic generation of high power microwaves and millimeter-waves in RF photonic systems. An in depth understanding of the failure mechanis...