The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N2/H2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (Ts ≤ 420K). The main effects resulting from the depo...

We have investigated the change in crystallographic and magnetic properties of sendust thin films before/after annealing. Films were deposited by both rf diode and rf magnetron sputtering. rf diode-sputtered films did not possess soft magnetic properties in the as-deposited state. Films were subsequently annealed in both a conventional oven and a rapid thermal annealing ~RTA! system. The coerci...

Mass spectroscopy was used to analyze the energy and composition of the ion flux during high power pulsed magnetron sputtering (HIPIMS/HPPMS) of a Cr target in an industrial deposition system. The ion energy distribution functions were recorded in the time-averaged and time-resolved mode for Ar + , Ar 2+ , Cr + , Cr 2+ , N2 + and N + ions. In the metallic mode the dependence on pulse energy (eq...