Layers of transition metal dichalcogenides (TMDs) conjugate the enhanced effects of correlations associated to the two-dimensional limit with electrostatic control over their phase transitions by means of an electric field. Several semiconducting TMDs, such as MoS2, develop superconductivity (SC) at their surface when doped with an electrostatic field, but the mechanism is still debated. It is ...

Submitted for the MAR08 Meeting of The American Physical Society Nature of the superconductor-insulator transition in disordered thin films YONATAN DUBI, Physics Department, University of California-San Diego, YIGAL MEIR, YSHAI AVISHAI, Department of Physics and The Ilse Katz Center for Mesoand Nano-Scale Science and Technology, Ben Gurion University, Beer Sheva 84105, Israel — Highly disordere...

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This paper describes an investigation into the general trend in electronic properties of anatase TiO2 photocatalysts co-doped with transition metals and nitrogen employing first-principles density functional theory. Fourteen different transition metals (M), including Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, and Cd, have been considered. The characteristic band structures of the co-dopi...

We studied the transport properties of meso-junctions semiconducting (Sm) highly doped Si with different superconductors (Sc) through point contact Andreev reflection (PCAR) spectroscopy. Spectra low transparency contacts between and In showed an enhancement in superconducting energy gap In. This was due to effect additional arising from Schottky barrier at Sm-Sc interface. For higher Si-Nb Si-...

In this work, the growth and the fabrication of heavily doped germanium plasmonic antennas for mid-infrared applications is reported. By tuning the phosphorus doping concentration and the antenna geometrical parameters, plasma frequencies for targeting the 8-15 μm spectral region are achieved. 1 μm thick, heavily doped (2.3 × 10 cm ) germanium was used to fabricate dipole antennas of 800 nm wid...

A combined experimental and theoretical/band structure investigation is reported of Ga-doped CdO (CGO) and In-doped CdO (CIO) thin films grown on both amorphous glass and single-crystal MgO(100) substrates at 410 °C by metal–organic chemical vapor deposition (MOCVD). Film phase structure, microstructure, and electrical and optical properties are systematically investigated as a function of dopi...