نتایج جستجو برای: self cascode

تعداد نتایج: 526501  

Journal: :IEEE Transactions on Power Electronics 2020

Journal: :IEICE Electronic Express 2011
Izhal Abdul Halin Amad ud Din Ishaq b. Aris Maryam bt. Mohd Isa Suhaidi Shafie Shoji Kawahito

Although CMOS Time-of-Flight Range Image Sensors have been recently realized, the fabrication process is modified by inserting an extra mask layer to allow efficient TOF dependent charge transfer. This work focuses on the selection procedure of amplifiers to be used in the design of the TOF pixel using the standard CMOS process. From our analysis, it is found that the Cascode amplifier is the b...

2009
T. Noulis G. Fikos S. Siskos G. Sarrabayrouse

In this work, a detailed comparison of four equivalent charge-sensitive, folded-cascode amplifiers in terms of noise performance is presented. A couple of complementary structures, one with a noise-optimised input nMOSFET and the other with a noise-optimised input pMOSFET were designed in 0.35 μm CMOS process by Austria MicroSystems (AMS). Another couple of complementary structures consisting o...

Journal: :Izvestiâ ÛFU 2023

Three circuit techniques are proposed that provide (with simultaneous use) an increase bymore than two orders of magnitude the maximum output voltage slew rate (SR) microelectronicoperational amplifiers (op-amps) based on bipolar transistors with a classical architecture,designed to operate in automatic control systems, radio engineering and communications, forexample, as drivers for ultra-high...

2013
Sanjeev Sharma Pawandeep Kaur Tapsi Singh

In this paper, a low Power, Gain Boosted Recycling Folded Cascode Operational Transconductance Amplifier (GB-RFC OTA) is described. The proposed GB-RFC OTA is designed using 130nm CMOS technology and achieves enhanced gain, unity gain bandwidth and slew rate with the low Power budget. The proposed circuit operates on 1V supply voltage and 200 μA bias current and consumes a power of 798μW.The GB...

2006
Cher-Shiung Tsai Chung-Chih Hsiao Kwang-Jow Gan Jia-Ming Wu Ming-Yi Hsieh Chun-Chieh Liao Shih-Yu Wang Feng-Chang Chiang Chia-Hung Chen Dong-Shong Liang Yaw-Hwang Chen

First, we create a MOS-NDR (negative differential resistance) cell and then put two MOS-NDR cells in cascode (totem-pole) structure. With MOBILE (monostable-bistable transition logic element) theorem we can built a MOS-NDR inverter by placing a NMOS in parallel with the lower part of the cascode structure. The MOS-NDR inverter cascades two Common-Source amplifier and feedback to MOS-NDR inverte...

Journal: :IEICE Transactions 2012
Zhisheng Li Johan Bauwelinck Guy Torfs Xin Yin Jan Vandewege

This paper presents a new common-mode stabilization method for a CMOS differential cascode Class-E power amplifier with LCtank based driver stage. The stabilization method is based on the identification of the poles and zeros of the closed-loop transfer function at a critical node. By adding a series resistor at the common-gate node of the cascode transistor, the right-half-plane poles are move...

2010
Steven R. Jefferts

A low noise amplifier has been designed using a 2SK117 N channel J-FET as the input device in a cascode [1] configuration. Noise measurements on this amplifier yield a low frequency noise current of 0.25 fA/Yfu and a voltage noise of less than 1.2 n V NHz in the 500 Hz to 50 kHz region. Bloyet et al. [2] suggest a figure of merit of the product of the noise voltage and current as being appropri...

Journal: :IEEE Journal of Emerging and Selected Topics in Power Electronics 2023

In this article, an optimum ferrite beads design method is proposed to suppress the self-sustained turn-off oscillation of cascode gallium nitride high-electron-mobility transistors (GaN HEMTs). At first, impacts gate loop and power on GaN HEMTs are analyzed. The analysis reveals weak damping effect oscillation. Next, analytical that can achieve maximum effective introduce extra stray inductanc...

2009
Hank Bink Cherie Kagan

Organic transistor technology holds great promise for creating a conformal, human-safe electronic neural interface. These interfaces must amplify the low, microvolt-range brain signals so they can be utilized in analog and digital applications. Brain signals from sensors must be relayed to the transistor’s gate through the dielectric and semiconductor layers, as well as through an encapsulant w...

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