In this paper we critique the first order quantum efficiency and modulation transfer function (MTF) analysis for photocollection in both a finite and semi-infinite slab of semiconducting material. We derive the correct equations from first principles and perform a case study comparing photodetection in silicon and GaAs. This is of interest in the first order design of GaAs and silicon optical s...

All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it...

Single-walled carbon nanotubes (SWNTs) have been of interest for their unique material properties. Their high thermal and electrical conductivity, metallic or semiconducting nature, as well as chemically stable structure make them ideal for numerous applications. However, development of potential applications has been limited due to the inability to consistently separate SWNTs by chirality, dia...

Recently the new graphitic material, BC 3, has been shown to exhibit electrical conductance which is 10% larger than graphite. In order to explain this behavior we show that in the BC 3 monolayer the Fermi level lies at the top of the o bands and that the semimetallic behavior, which appears upon stacking of the semiconducting monolayers, arises from the simultaneous presence of o and ~ bands a...

A multi-level 3D selenide framework in an In(3+)-Ge(4+) system was synthesized. The interconnection between super-supertetrahedral T2,2 and supertetrahedral T3 clusters via their terminal Se(2-) leads to a previously unknown hybrid T2,2-T3 linkage mode. The synthetic realization of this material represents another new level of complexity and demonstrates the versatility in the construction and ...

Processing strategies and methodologies are reviewed that allow the control assessment of polymorph formation in semiconducting small molecules using 5,11-bis(triethylsilylethynyl) anthradithiophene (TES ADT) as a model material system.

issues. These include the material employed in the reactor walls, the cladding material for the fissile nuclear fuel, and the material used for retaining the fission products. In addition to long term resistance to irradiation, the materials used in a nuclear reactor must have excellent mechanical and corrosion properties in order to tolerate the thermal shocks as well as the high temperature a...

Semiconducting indium sulfide (In2S3) has recently attracted considerable attention as a buffer material in the field of thin film photovoltaics. Compared with this growing interest, however, detailed characterizations of the crystal structure of this material are rather scarce and controversial. In order to close this gap, we have carried out a reinvestigation of the crystal structure of this ...

Enhancing the output power of a nanogenerator is essential in applications as a sustainable power source for wireless sensors and microelectronics. We report here a novel approach that greatly enhances piezoelectric power generation by introducing a p-type polymer layer on a piezoelectric semiconducting thin film. Holes at the film surface greatly reduce the piezoelectric potential screening ef...